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Growth of electromigration-induced hillocks in Al interconnects

Published online by Cambridge University Press:  31 January 2011

J. A. Nucci ,
A. Straub ,
E. Bischoff ,
E. Arzt  and
C. A. Volkert
J. A. Nucci
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstraβe 3, D-70569 Stuttgart, Germany
A. Straub
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstraβe 3, D-70569 Stuttgart, Germany
E. Bischoff
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstraβe 3, D-70569 Stuttgart, Germany
E. Arzt
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstraβe 3, D-70569 Stuttgart, Germany
C. A. Volkert
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstraβe 3, D-70569 Stuttgart, Germany
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Abstract

Electromigration-induced hillock growth in polycrystalline Al segments was extensively investigated. Hillocks composed of columnar grains grew near the anode by epitaxial Al addition at the interface between the Al and underlying TiN layer, which pushed up the original Al film. The hillocks rotated away from their initial (111) out-of-plane orientation in a manner consistent with the physical rotation of the hillock surface. Wedgelike and rounded hillocks were observed, and their formation is explained by the interaction between grain extrusion and grain growth. Trends elucidated by review of both thermal- and electromigration-induced hillock studies can be explained by the mechanisms identified in this work.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 10 , October 2002 , pp. 2727 - 2735
Copyright
Copyright © Materials Research Society 2002

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