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Growth of textured diamond films on Si(100) by C2H2/O2 flame method

Published online by Cambridge University Press:  31 January 2011

J. Hwang ,
K. Zhang ,
B. S. Kwak ,
A. Erbil  and
Z. C. Feng
J. Hwang
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332
K. Zhang
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332
B. S. Kwak
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332
A. Erbil*
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332
Z. C. Feng
Affiliation:
Department of Physics, Emory University, Atlanta, Georgia 30322
*
a)Address correspondence to this author.
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Abstract

Highly textured diamond thin films with (111) orientation have been successfully grown on the single crystal silicon (100) substrates by the flame method using the premixed acctylene and oxygen gas. Scanning electron microscopy (SEM), x-ray diffraction, and Raman spectroscopy studies have shown the formation of uniform diamond films with the full coverage of the deposition area on the Si substrates. An approach which leads to growing diamond films with very low graphite and/or amorphous carbon contaminations is described.

Type
Diamond and Diamond-Like Materials
Information
Journal of Materials Research , Volume 5 , Issue 11 , November 1990 , pp. 2334 - 2336
Copyright
Copyright © Materials Research Society 1990

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References

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