Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-26T22:47:59.710Z Has data issue: false hasContentIssue false
  • English
  • Français

High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas

Published online by Cambridge University Press:  05 July 2012

M. Cutroneo ,
P. Musumeci ,
M. Zimbone ,
L. Torrisi ,
F. La Via ,
D. Margarone ,
A. Velyhan ,
J. Ullschmied  and
L. Calcagno
M. Cutroneo
Affiliation:
Physics Department, Messina, V.le F. Stagno D’Alcontres 31, 98166 S. Agata (ME), Italy
P. Musumeci
Affiliation:
Dipartimento di Fisica, Università di Catania, V. S. Sofia 64, 95123 Catania, Italy
M. Zimbone
Affiliation:
Dipartimento di Fisica, Università di Catania, V. S. Sofia 64, 95123 Catania, Italy
L. Torrisi
Affiliation:
Physics Department, Messina, V.le F. Stagno D’Alcontres 31, 98166 S. Agata (ME), Italy
F. La Via*
Affiliation:
Istituto Microelettronica Microsistemi-CNR, Stradale Primosole, Catania, Italy
D. Margarone
Affiliation:
ELI Beamlines Project, Institute of Physics of the ASCR, Na Slovance 2, 18221, Prague, Czech Republic
A. Velyhan
Affiliation:
ELI Beamlines Project, Institute of Physics of the ASCR, Na Slovance 2, 18221, Prague, Czech Republic
J. Ullschmied
Affiliation:
Institute of Plasma Physics, AS CR, v.v.i., Za Slovankou 3, Prague 8, Czech Republic
L. Calcagno*
Affiliation:
Dipartimento di Fisica, Università di Catania, V. S. Sofia 64, 95123 Catania, Italy
*
b)Address all correspondence to this author. e-mail: lucia.calcagno@ct.infn.it
Get access

Abstract

Silicon carbide (SiC) detectors were used to analyze the multi-MeV ions of the plasma produced by irradiation of various targets with a 300-ps laser at intensity of 1016 W/cm2. The SiC detectors were realized by fabricating Schottky diodes on 80 μm epitaxial layer. The low dopant concentration and defect density of the epilayer allowed the realization of good performance detectors. The use of SiC detectors ensures the cutting of the visible and soft ultraviolet radiation emitted from plasma enhancing the sensitivity to very fast ions. The time-of-flight spectra obtained by irradiating different targets show a peak associated to protons and various peaks relative to different charge states of ions. Processing of the experimental data allows to estimate the energies of the protons and of the different ions emitted from laser-induced plasma. The SiC detector results are compared with the ones obtained by Ion Collector and a Thomson Parabola spectrometer.

Keywords

silicon carbideion detectorshigh power laserphotonsenergetic ions
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 1: Focus Issue: Silicon Carbide – Materials, Processing and Devices , 14 January 2013 , pp. 87 - 93
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Park, Y.S.: SiC materials and devices, in Semiconductors and Semimetal Vol. 52, edited by Willardson, R.K. and Weber, E.R. (Academic, San Diego, CA, 1998).Google Scholar
Matsunami, H.: Technological breakthroughs in growth control of silicon carbide for high power electronic devices. Jpn. J. Appl. Phys. 43, 6835 (2004).Google Scholar
Nava, F., Bertuccio, G., Cavallini, A., and Vittone, E.: Silicon carbide and its use as a radiation detector material. Meas. Sci. Technol. 19, 102011 (2008).Google Scholar
Ruddy, F.H., Dulloo, A.R., Seidel, J.G., Das, M.K., Ryu, S-H., and Agarwal, A.K.: The fast neutron response of 4H silicon carbide semiconductor radiation detector. IEEE Trans. Nucl. Sci. 53, 1666 (2006).Google Scholar
Bertuccio, G., Casiraghi, R., Gatti, E., Maiocchi, D., Nava, F., Canali, C., Cetronio, A., and Lanzieri, C.: SiC x-ray detectors for spectroscopy and imaging over a wide temperature range. Mater. Sci. Forum. 433, 941 (2003).Google Scholar
De Napoli, M., Raciti, G., Rapisarda, E., and Sfienti, C.: Light ions response of silicon carbide detectors. Nucl. Instrum. Methods Phys. Res., Sect. A 572, 831 (2007).Google Scholar
Torrisi, L., Foti, G., Giuffrida, L., Puglisi, D., Wolowski, J., Badziak, J., Parys, P., Rosinski, M., Margarone, D., Krasa, J., Velyhan, A., and Ullschmied, U.: Single crystal silicon carbide detector of emitted ions and soft x rays from power laser-generated plasmas. J. Appl. Phys. 105, 123304 (2009).Google Scholar
Margarone, D., Krása, J., Giuffrida, L., Picciotto, A., Torrisi, L., Nowak, T., Musumeci, P., Velyhan, A., Prokůpek, J., Láska, L., Mocek, T., Ullschmied, J., and Rus, B.: Full characterization of laser-accelerated ion beams using Faraday cup, silicon carbide, and single-crystal diamond detectors. J. Appl. Phys. 109, 103302 (2011).Google Scholar
Borghesi, M., Fuchs, J., Bulanov, S.V., Macckinnon, A.J., Patel, P.K., and Roth, M.: Fast ion generation by high-intensity laser irradiation of solid targets and applications. Fusion Sci. Technol. 49, 412 (2006).Google Scholar
Margarone, D., Torrisi, L., Cavallaro, S., Milani, E., Verona-Rinati, G., Marinelli, M., Tuvè, C., Láska, L., Krása, J., Pfeifer, M., Krousky, E., Ullshmied, J., Ryć, L., Mangione, A., and Mezzasalma, A.M.: Diamond detectors for characterization of laser-generated plasma. Radiat. Eff. Defects Solids 163, 463 (2008).Google Scholar
Moscatelli, F.: Silicon carbide for UV, alpha, beta and x-ray detectors: Results and perspectives. Nucl. Instrum. Methods Phys. Res., Sect. A 583, 157 (2007).Google Scholar
Lo Giudice, A., Fizzoti, F., Manfredotti, C., Vittone, E., and Nava, F.: Average energy dissipated by mega-electron-volt hydrogen and helium ions per electron-hole pair generation in 4H-SiC. Appl. Phys. Lett. 87, 222105 (2005).Google Scholar
Laska, L., Badziak, J., Gammino, S., Jungwirth, K., Kasperczuk, A., Kasa, J., Krousky, E., Kubes, P., Parys, P., Pfeifer, M., Pisarczyk, T., Rohlena, K., Rosinski, M., Ryc, L., Skala, J., Torrisi, L., Ullschmied, J., Velyhan, A., and Wolowski, J.: The influence of an intense laser beam interaction with performed plasma on the characteristics of emitted ion stream. Laser Part. Beams 25, 1 (2007).Google Scholar
Calcagno, L., Izzo, G., Litrico, G., Foti, G., La Via, F., Galvagno, G., Mauceri, M., and Leone, S.: Optical and electrical properties of 4H-SiC epitaxial layers grown with HCl addition. J. Appl. Phys. 102, 43523 (2007).Google Scholar
La Via, F., Izzo, G., Mauceri, M., Pistone, G., Condorelli, G., Perdicaro, L., Abbondanza, G., Calcagno, L., Foti, G., and Crippa, D.: 4H-SiC epitaxial layer growth by trichlorosilane (TCS). J. Cryst. Growth 311, 107 (2008).Google Scholar
Harres, K., Schollmeier, M., and Brambrik, E.: Development of a high resolution and high dispersion Thomson parabola. Rev. Sci. Instrum. 79, 93306 (2008).Google Scholar
Ziegler, J.F., Biersack, J.P., and Ziegler, M.D.: SRIM-The Stopping and Range of Ions in Matter (SRIM, Annapolis, MD, 2008).Google Scholar
Torrisi, L., Gammino, S., Andò, L., and Laska, L.: Tantalum ions produced by 1064 nm pulsed laser irradiation. J. Appl. Phys. 91, 4685 (2002).Google Scholar
Cobam, OPERA-3D/TOSCA, 2012: http://www.cobham.com/about-cobham/aerospace-and-security/about-us/antenna-systems/kidlington/products/opera-3d/statics.aspxGoogle Scholar