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High-temperature interfacial reaction of an Al thin film with single-crystal 6H–SiC

Published online by Cambridge University Press:  31 January 2011

Byung-Teak Lee ,
Yang-Soo Shin  and
Jin Hyeok Kim
Byung-Teak Lee
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Kwangju 500–757, Korea
Yang-Soo Shin
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Kwangju 500–757, Korea
Jin Hyeok Kim*
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Kwangju 500–757, Korea
*
a)Address all correspondence to this author. e-mail: jinhyeok@chonnam.ac.kr
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Abstract

Interfacial reactions between an Al thin film and a single-crystal (001) 6H–SiC substrate were investigated using x-ray diffraction and cross-sectional transmission electron microscopy. Aluminum thin films were prepared by radio-frequency magnetron sputtering method on 6H–SiC substrates at room temperature and then annealed at various temperatures from 500 to 900 °C. A columnar-type polycrystalline Al thin film was formed on a 6H–SiC substrate in the as-deposited sample. No remarkable microstructural change, compared to the as-deposited sample, was observed in the sample annealed at 500 °C for 1 h. However, it was found that the Al layer reacted with the SiC substrate at 700 °C and formed an Al–Si–C ternary compound at the Al/SiC interface. Samples annealed at 900 °C showed a double-layer structure with an Al–Si mixed surface layer and an Al–Si–C compound layer below in contact with the substrate.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 11 , November 2000 , pp. 2284 - 2287
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1.Weitzel, C.E. and Moore, K.E., J. Electron. Mater. 27, 365 (1998).CrossRefGoogle Scholar
2.Neudeck, P.G., J. Electron. Mater. 24, 283 (1995).Google Scholar
3.Alok, D., McLarty, P.K., and Baliga, B.J., Appl. Phys. Lett. 64, 2845 (1994).CrossRefGoogle Scholar
4.Porter, L.M. and Davis, R.F., Mater. Sci. Eng. B34, 83 (1995).CrossRefGoogle Scholar
5.Arsenault, R.J. and Pande, C.S., Scr. Metall. 18, 1131 (1984).CrossRefGoogle Scholar
6.Lloyd, D.J., Lagace, H., McLeod, A., and Morris, P.L., Mater. Sci. Eng. A107, 73 (1989).CrossRefGoogle Scholar
7.Viala, J.C., Bosselet, F., Laurent, V., and Lepetitcorps, Y., J. Mater. Sci. 28, 5301 (1993).CrossRefGoogle Scholar
8.Stoemenos, J., Pecz, B., and Heera, V., Appl. Phys. Lett. 74, 2602 (1999).Google Scholar
9.Inoue, Z., Inomata, Y., and Tanaka, H., J. Mater. Sci. 15, 575 (1980).CrossRefGoogle Scholar
10.Kidwell, B.L., Oden, L.L., and McCune, R.A., J. Appl. Crystallogr. 17, 481 (1984).CrossRefGoogle Scholar