Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-14T05:20:43.266Z Has data issue: false hasContentIssue false

Influence of In and Ag atoms on optical and electrical properties of some Ge–Sb–S glasses

Published online by Cambridge University Press:  31 January 2011

H. Tichá
Affiliation:
University of Chemical Technology, 53210 Pardubice, Czechoslovakia
L. Tichy
Affiliation:
Joint Laboratory for Chemistry of Solids of Czechoslovak Academy of Sciences, Prague, and of the University of Chemical Technology, Pardubice, 53210 Pardubice, Czechoslovakia
J. Klikorka
Affiliation:
Joint Laboratory for Chemistry of Solids of Czechoslovak Academy of Sciences, Prague, and of the University of Chemical Technology, Pardubice, 53210 Pardubice, Czechoslovakia
Get access

Abstract

The influence of In and Ag atoms on the dc electrical conductivity and optical properties in the short wavelength edge region in Ge20Sb10S70 and Ge30Sb10S60 glasses has been examined. Contrary to the effect of In atoms, the Ag atoms at concentration levels below 4 at. % of Ag significantly influence the dc conductivity. Changes of the optical properties are less significant, and they are affected in a similar way by incorporation of In and Ag atoms into a glassy matrix. It is supposed that some of the Ag atoms are positively ionized to an Ag+ species that remains in the network. The 5s1 electron of Ag interacts with D+ states making, in the final state, an increase of D defect states. Thus the Fermi level is shifted to the valence band and the dc conductivity increases.

Type
Articles
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Mott, N. F.J. Phys. C 13, 5433 (1980).CrossRefGoogle Scholar
2Fritzsche, H.J. Phys. Soc. Jpn. 49, Suppl. A 39 (1980).Google Scholar
3Hauser, J. J.Shutton, R. and Standinger, A.Philos. Mag. B 44, 109 (1981).CrossRefGoogle Scholar
4Lezal, D.Trkal, V.Srb, I.Dokoupil, S.Smid, V. and Rosicka, V.Phys. Status Solidi A 12, K 39 (1972).CrossRefGoogle Scholar
5Arai, K.Kuwahata, T.Namikawa, H. and Saito, S.Jpn. J. Appl. Phys. 11, 1080 (1972).Google Scholar
6Kolomiets, B. T.Lebedev, E. A. and Rogachev, N. A.Sov. Phys. Semicond. 8, 3481 (1974).Google Scholar
7Watanabe, I.Inagaki, Y. and Shimizu, T.J. Phys. Soc. Jpn. 41, 2030 (1976).Google Scholar
8Bletskan, D. I.Gerasimenko, B. S.Mitrovtsii, I. M.Polazhinets, N. B., and Khiminets, V. V.Ukr. Fiz. Zh. 29 (7), 1074 (1984).Google Scholar
9Kastner, M.Philos. Mag. B 37, 127 (1978).Google Scholar
10Ticha, H.Tichy, L.Ryŝavá, N. and Třiska, A.J. Non-Cryst. Solids 74, 37 (1985).CrossRefGoogle Scholar
11Tichá, H. and Frumar, M.J. Non-Cryst. Solids 16, 110 (1974).CrossRefGoogle Scholar
12Mott, N. F. and Davis, E. A.Electronic Processes in Non-Crystalline Materials (Claredon, Oxford, 1979), 2nd ed.Google Scholar
13Mott, N. F.Philos. Mag. 34, 1101 (1976).Google Scholar
14Fritzsche, H. and Kastner, M.Philos. Mag. B 37, 285 (1978).Google Scholar
15Frumar, M.Plesch, G.Ĉernoŝková, E.Ĉerný, V.Tichý, L. and Tichá, H.Collect. Czech. Chem. Commun. 47, 1787 (1982).CrossRefGoogle Scholar
16Pfister, G. and Taylor, P. C.J. Non-Cryst. Solids 35-36, 793 (1980).CrossRefGoogle Scholar