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Influence of vapor annealing on the thermoelectric properties of electrodeposited Bi2Te3

Published online by Cambridge University Press:  30 June 2011

Raimar Rostek ,
Vladimir Sklyarenko  and
Peter Woias
Raimar Rostek*
Affiliation:
Department of Microsystems Engineering – IMTEK, University of Freiburg, 79110 Freiburg, Germany
Vladimir Sklyarenko
Affiliation:
Department of Microsystems Engineering – IMTEK, University of Freiburg, 79110 Freiburg, Germany
Peter Woias*
Affiliation:
Department of Microsystems Engineering – IMTEK, University of Freiburg, 79110 Freiburg, Germany
*
a)Address all correspondence to these authors. e-mail: rostek@imtek.de
b)e-mail: woias@imtek.de
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Abstract

This research investigates the combination of electrochemical deposition and postdeposition vapor annealing as a method for the fabrication of Bi2Te3 layers. The galvanostatic deposition of Bi2Te3 thin films is characterized as a function of electrolyte composition and deposition-current density. Material with near-stoichiometric composition can be synthesized from electrolytes containing 20 mM Te and 30 mM Bi ions and a deposition-current density of 3.75 mA/cm2. All deposited samples show n-type behavior with Seebeck coefficients around −55 μV/K. An equilibrium annealing process in Te atmosphere is used to readjust the composition of the material after the deposition, consistently leading to tellurium-rich Bi2Te3 with a Te content of 60.4 ± 0.4 at%. At a temperature of 250 °C, an annealing duration of 60 h is sufficient for the material properties to reach a steady state, with a Seebeck coefficient of −130 μV/K.

Keywords

AnnealingChemical compositionElectrodeposition
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 15: Focus Issue: Advances in Thermoelectric Materials , 14 August 2011 , pp. 1785 - 1790
Copyright
Copyright © Materials Research Society 2011

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References

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