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Influence of Zr additives on the microstructure and oxidation resistance of Cu(Zr) thin films

Published online by Cambridge University Press:  03 March 2011

C.J. Liu  and
J.S. Chen
C.J. Liu
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
J.S. Chen*
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
*
a) Address all correspondence to this author. e-mail: jenschen@mail.ncku.edu.tw
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Abstract

In this work, the microstructure and oxidation resistance of pure Cu, Cu(0.2 at.% Zr) and Cu(2.5 at.% Zr) alloy films deposited on SiO2/Si by sputtering were explored. Upon annealing, the Zr additives diffused to the free surface and reacted with the residual oxygen in the vacuum system. An additional ZrO2 layer formed and covered the Cu(2.5 at.% Zr) film surface after annealing at 700 °C for 30 min. Simultaneously, of the three films, the Cu(2.5 at.% Zr) film exhibited the highest degree of Cu(111) preferred orientation and the lowest degree of void growth upon annealing. Additionally, the Cu(2.5 at.% Zr) film pre-annealed at 700 °C showed a superior oxidation resistance when annealed at 200 °C in air for 15 min. Microstructure and oxidation resistance of Cu(Zr) alloy films were clearly affected by the ZrO2 layer formed via the segregation of Zr additives, and the connection is discussed.

Keywords

AlloyMicrostructureOxidation/annealing
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 2 , February 2005 , pp. 496 - 503
Copyright
Copyright © Materials Research Society 2005

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