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Influences of ambient atmosphere on diamond synthesis using an oxygen-acetylene torch

Published online by Cambridge University Press:  03 March 2011

R.C. Aldredge
Affiliation:
Mechanical, Aeronautical & Materials Engineering, University of California-Davis, Davis, California 95616–5294
D.G. Goodwin
Affiliation:
Division of Engineering and Applied Sciences, California Institute of Technology, Pasadena, California 91125
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Abstract

The influence of the ambient atmosphere on the synthesis of diamond by chemical vapor deposition using an oxygen-acetylene torch is investigated experimentally. Diamond synthesis in an air atmosphere is compared to that in an inert atmosphere. It is found that the quality of diamond deposited on substrates positioned in the burnt gases near the premixed flame of the torch (within 1 mm) is independent of the composition of the ambient gas. Farther downstream from the premixed flame in the feather region, however, diamond deposition is controlled by the combustion of incomplete products from the premixed flame with oxygen from the atmosphere. In this region diamond grows in an annulus on the substrate with an air atmosphere, but no film is grown with an inert atmosphere.

Type
Articles
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1Celii, F. G. and Butler, J. E., Ann. Rev. Phys. Chem. 42, 643 (1991).CrossRefGoogle Scholar
2Martin, J., Industrial Diamond Review 50, 291 (1990).Google Scholar
3Hanssen, L. M., Carrington, W. A., Butler, J. E., and Snail, K. A., Mater. Lett. 7, 289 (1988).Google Scholar
4Matsui, Y., Yuuki, A., Sahara, M., and Hirose, Y., Jpn. J. Appl. Phys. 28, 1718 (1989).Google Scholar
5Harris, S. J., Appl. Phys. Lett. 56, 2298 (1990).Google Scholar
6Matsui, Y., Yabe, H., and Hirose, Y., Jpn. J. Appl. Phys. 29, 1552 (1990).Google Scholar
7Doverspike, K., Butler, J. E., and Freitas, J. A. Jr., in Wide Band Gap Semiconductors, edited by Moustakas, T. D., Pankove, J. I., and Hamakawa, Y. (Mater. Res. Soc. Symp. Proc. 242, Pittsburgh, PA, 1992), p. 37.Google Scholar
8Bregeon, B. G., Kadirgan, M. A. N, and Lamy, C., Eighteenth Symposium (International) on Combustion (The Combustion Institute, Pittsburgh, PA, 1981), pp. 405413.Google Scholar
9Angus, J. C., Buck, F. A., Sunkara, M., Groth, T. F., Hayman, C. C., and Gat, R., Mater. Res. Bull. 3847 (1989).Google Scholar