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Inhibition of interfacial embrittlement at SnBi/Cu single crystal by electrodeposited Ag film

Published online by Cambridge University Press:  31 January 2011

Q.S. Zhu ,
Z.F. Zhang ,
Z.G. Wang  and
J.K. Shang
Q.S. Zhu
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
Z.F. Zhang*
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
Z.G. Wang
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
J.K. Shang*
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801
*
a) Address all correspondence to these authors. e-mail: zhfzhang@imr.ac.cn
b) Address all correspondence to these authors. e-mail: jkshang@imr.ac.cn
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Abstract

Electrodeposited Ag film was explored as a potential interfacial barrier to Bi segregation for suppressing the interfacial embrittlement of Cu/SnBi interconnects. The presence of Ag film introduced Ag3Sn intermetallic layer at the interface, which effectively prevented Bi from reaching the Cu/intermetallic interface. When the persistent slip bands (PSBs) in the Cu single crystal were driven to impinge the Cu/Cu3Sn interface, interfacial cracking was averted and instead superceded by cracking of intermetallic compounds (IMCs) at the interface.

Keywords

Electronic materialEmbrittlementFatigue
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 1 , January 2008 , pp. 78 - 82
Copyright
Copyright © Materials Research Society 2008

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References

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