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Interfacial Microstructure Evolution Between Eutectic SnAgCu Solder and Al/Ni(V)/Cu Thin Films

Published online by Cambridge University Press:  31 January 2011

M. Li
Affiliation:
Institute of Materials Research and Engineering, Singapore 119260
F. Zhang
Affiliation:
Institute of Materials Research and Engineering, Singapore 119260
W. T. Chen
Affiliation:
Institute of Materials Research and Engineering, Singapore 119260
K. Zeng
Affiliation:
Department of Materials Science and Engineering, UCLA, Los Angeles,California 90095–1595
K. N. Tu
Affiliation:
Department of Materials Science and Engineering, UCLA, Los Angeles,California 90095–1595
H. Balkan
Affiliation:
K & S—Flip Chip Division, Phoenix, Arizona 85034
P. Elenius
Affiliation:
K & S—Flip Chip Division, Phoenix, Arizona 85034
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Abstract

The evolution of interfacial microstructure of eutectic SnAgCu and SnPb solders on Al/Ni(V)/Cu thin films was investigated after various heat treatments. In the eutectic SnPb system, the Ni(V) layer was well protected after 20 reflow cycles at 220 °C. In the SnAgCu solder system, after 5 reflow cycles at 260 °C, the (Cu,Ni)6Sn5 ternary phase formed and Sn was detected in the Ni(V) layer. After 20 reflow cycles, the Ni(V) layer disappeared and spalling of the (Cu,Ni)6Sn5 was observed, which explains the transition to brittle failure mode after ball shear testing. The different interfacial reactions that occurred in the molten SnAgCu and SnPb systems were explained in terms of different solubilities of Cu in the two systems. The dissolution and formation of the (Cu,Ni)6Sn5phase were discussed on the basis of a Sn–Ni–Cu phase diagram. In the solid-state aging study of the SnAgCu samples annealed at 150 °C for up to 1000 h, the Ni(V) layer was intact and the intermetallic compound formed was Cu6Sn5 and not (Cu,Ni)6Sn5, which is the same as was observed for the eutectic SnPb system.

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Articles
Copyright
Copyright © Materials Research Society 2002

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