Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-28T15:34:55.023Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of CF3I as an Environmentally Benign Dielectric Etchant

Published online by Cambridge University Press:  31 January 2011

R. A. Levy ,
V. B. Zaitsev ,
K. Aryusook ,
C. Ravindranath ,
V. Sigal ,
A. Misra ,
S. Kesari ,
D. Rufin ,
J. Sees  and
L. Hall
R. A. Levy
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
V. B. Zaitsev
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
K. Aryusook
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
C. Ravindranath
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
V. Sigal
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
A. Misra
Affiliation:
Air Liquide Electronics Chemicals & Services, Dallas, Texas 75243
S. Kesari
Affiliation:
Air Liquide Electronics, Walnut Creek, California 94596
D. Rufin
Affiliation:
Air Liquide Electronics, Walnut Creek, California 94596
J. Sees
Affiliation:
Texas Instruments, M/S 301, Dallas, Texas 75243
L. Hall
Affiliation:
Texas Instruments, M/S 301, Dallas, Texas 75243
Get access

Abstract

In this study, trifluoroiodomethane (CF3I), a non-global-warming gas, has been investigated as a substitute for typical PFC's currently used in wafer patterning and CVD chamber cleaning processes. Dielectric films consisting of plasma enhanced chemically vapor deposited silicon dioxide and silicon nitride were comparatively etched in CF3I and C2F6/O2 plasma environments. The etch rate of these films was ascertained as a function of applied rf power, etchant gas flow rate, reaction chamber pressure, and CF3I: O2 ratio. Destruction efficiencies of CF3I at different processing parameters were evaluated. Depending on the flow rate, rf power, and chamber pressure, utilization efficiency of CF3I varied from as low as 10% to as high as 68%. CF4, C2F6, COF2, and CO2 were the predominant by-products found in the exhaust stream; however, their concentrations were very low compared to the traditional process employing C2F6/O2 mixtures.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 9 , September 1998 , pp. 2643 - 2648
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Intergovernmental Panel on Climate Change, Radiative Forcing of Climate Change—The 1995 Report of the Scientific Assessment Working Group of the IPCC (1995).Google Scholar
2.Ravishankara, A. R., Solomon, S., Turnipseed, A. A., and Warren, R. F., Science 259, 196 (1993).CrossRefGoogle Scholar
3.Maroulis, P., Langan, J., Johnson, A., Ridgeway, R., and Withers, H., Semicond. Int. 11, 107 (1994).Google Scholar
4.Karecki, S. M., Tao, B. A., and Reif, R., Proceedings of SRC Techcon 1996 Conference, Phoenix, AZ (September 1996).Google Scholar
5.Mahal, P., “C3F8 Etch Process Development Report,” Novellus Systems, Inc. (unpublished report, July 1995).Google Scholar
6.Bryant, B., Schumacher, CA (unpublished report, 1996).Google Scholar
7.Tapscott, R. E., Skaggs, S. R., and Dierdorf, D., in Halon Replacements: Technology and Science, edited by Tsang, W. and Miziolek, A. W. (ACS Symposium Series, 1995), Vol. 611, p. 14.Google Scholar
8.Solomon, S., Burkholder, J. B., Ravishankara, A. R., and Garcia, R. R., J. Geophys. Res. 99, 20,929 (1994).Google Scholar
9.Levy, R. A., Grow, J. M., Yu, Y., and Shih, K. T., Mater. Lett. 24, 47 (1995).CrossRefGoogle Scholar
10.Levy, R. A., Chen, L., Grow, J. M., and Yu, Y., Electrochem. Soc. Proc. 96–1, 1059 (1996).Google Scholar
11.Morgan, R. A., Plasma Etching in Semiconductor Fabrication (Elsevier, New York, 1985).Google Scholar