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Investigation of interfacial phenomena in Ag–Si multilayers during the annealing process

Published online by Cambridge University Press:  31 January 2011

J. H. Zhao ,
M. Zhang ,
R. P. Liu ,
X. Y. Zhang ,
L. M. Cao ,
D. Y. Dai ,
H. Chen ,
Y. F. Xu  and
W. K. Wang
J. H. Zhao*
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China
M. Zhang
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China
R. P. Liu
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China
X. Y. Zhang
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China
L. M. Cao
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China
D. Y. Dai
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China
H. Chen
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China
Y. F. Xu
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China
W. K. Wang
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China
*
a) Address all correspondence to this authors. e-mail: 503g@aphy.iphy.ac.cn
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Abstract

Interfacial phenomena and microstructure in Ag–Si multilayers with a modulation period of 7.64 nm during annealing from 323 to 573 K were investigated by in situ x-ray diffraction and high-resolution transmission electron microscopy. Uphill and downhill diffusion were observed on annealing. The temperature dependence of the effective diffusion coefficient from 373 K (as to downhill diffusion regime) to 523 K was De = 2.02 × 10−20 exp(−0.24 eV/kBT) m2/s. Diffusion of silicon atoms along silver grain boundaries was proposed as the main diffusion mechanism. After annealing, continuous silver sublayers changed to nanometer-sized silver particles (about 4.5 nm) coated completely by amorphous silicon.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 7 , July 1999 , pp. 2888 - 2892
Copyright
Copyright © Materials Research Society 1999

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References

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