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Isothermal capacitance transient spectroscopy study on trap levels in polycrystalline SnO2 ceramics

Published online by Cambridge University Press:  31 January 2011

Myung Chul Kim ,
Kug Hyun Song  and
Soon Ja Park
Myung Chul Kim
Affiliation:
Department of Materials Science and Engineering, KunSan National University, Kunsan 573-360, Korea
Kug Hyun Song
Affiliation:
Department of Inorganic Materials Engineering, Seoul National University, Seoul 151–742, Korea
Soon Ja Park
Affiliation:
Department of Inorganic Materials Engineering, Seoul National University, Seoul 151–742, Korea
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Abstract

The unusual sigmoidal behavior between electrical resistivity and inverse temperature in polycrystalline porous SnO2 was intensively investigated by detecting the localized traps formed at the interparticle through the measurement of Isothermal Capacitance Transient Spectroscopy. A trap of 1.0 eV was evaluated at a higher temperature range of 460–500 °C, and 0.6 eV trap at a lower temperature range 200–280 °C. It seems that the trap of 1.0 eV originates from O2− and 0.6 eV from O− defect center. Time constants which were determined at the peak position of ICTS spectra, S(t), were increased with the increase of temperature at the intermediate temperature range, indicative of the competition among various kinds of traps. The active competition among various traps is one of the causes that result in prominent gas sensitivity in polycrystalline porous SnO2.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 6 , June 1993 , pp. 1368 - 1372
Copyright
Copyright © Materials Research Society 1993

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References

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