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Joining of Ti3SiC2 with Ti–6Al–4V Alloy

Published online by Cambridge University Press:  31 January 2011

N.F. Gao  and
Y. Miyamoto
N.F. Gao
Affiliation:
Joining –1, Mihogaoka, Ibaraki,Osaka 567–0047, Japan
Y. Miyamoto
Affiliation:
Joining –1, Mihogaoka, Ibaraki,Osaka 567–0047, Japan
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Abstract

The joining of a Ti3SiC2 ceramic with a Ti–6Al–4V alloy was carried out at the temperature range of 1200–1400 °C for 15 min to 4 h in a vacuum. The total diffusion path of joining was determined to be Ti3SiC2/Ti5Si3Cx/Ti5Si3Cx + TiCx/TiCx/Ti. The reaction was rate controlled by the solid-state diffusion below 1350 °C and turned to the liquid-state diffusion controlled with a dramatic increase of parabolic rate constant Kp when the temperature exceeded 1350 °C. The TiCx tended to grow at the boundarywith the Ti–6Al–4V alloy at a higher temperature and longer holding time. TheTi3SiC2/Ti–6Al–4V joint is expected to be applied to implant materials.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 1 , January 2002 , pp. 52 - 59
Copyright
Copyright © Materials Research Society 2002

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