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Kinetics of the solid-state reaction for the formation of amorphous ZrCo studied by electrical conductance measurements

Published online by Cambridge University Press:  31 January 2011

H. Schröder  and
K. Samwer
H. Schröder
Affiliation:
I. Physikalisches Institut der Universität Göttingen, Bunsenstrasse 9, D-3400 Göttingen, Federal Republic of Germany
K. Samwer
Affiliation:
I. Physikalisches Institut der Universität Göttingen, Bunsenstrasse 9, D-3400 Göttingen, Federal Republic of Germany
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Abstract

Thin-film reactions of Co with Zr have been studied in the temperature range between 473 and 523 K by electrical conductance measurements and cross-sectional transmission electron microscopy (CS-TEM). The reduction of the electrical conductance during the solid state reaction is explained by formation and growth of an amorphous phase at every Zr/Co interface. For long reaction times the growth of the layer thickness follows a shifted $\sqrt t$ law. For short reaction times the measurements show a linear time law, which is expected for an interface limited reaction.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 3 , June 1988 , pp. 461 - 465
Copyright
Copyright © Materials Research Society 1988

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References

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