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Laser-induced interface reactions of copper thin films on sapphire substrates

Published online by Cambridge University Press:  31 January 2011

Mukund J. Godbole
Affiliation:
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996-2200
Anthony J. Pedraza
Affiliation:
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996-2200
Douglas H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6056
Edward A. Kenik
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6376
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Abstract

The interface of a copper-sapphire couple that was irradiated with a nanosecond pulsed-exeimer laser was studied by transmission electron microscopy. Deposited layers of 30 or 100 nm thickness were laser treated with energy densities in the range of 0.5 to 0.75 J/cm2. Two different atmospheres were used during these treatments, viz., air or a mixture of argon-4 vol. % hydrogen. The copper film and a thin alumina layer were melted by the laser pulse. Two well differentiated regions could be observed in the modified layer. The region closer to the unmodified substrate consisted of epitaxially regrown alumina with crystallites misoriented up to 10° relative to the substrate sapphire orientation, while precipitate particles could be seen closer to the resolidified copper. The nature of the precipitates generated in the second region was dependent on the atmosphere present during the treatment. In air a trirutile-like compound was obtained which is either oxygen or copper deficient. In an argon atmosphere a compound having a hexagonal structure closely related to sapphire was observed, where copper substituted for some aluminum. These observations are in agreement with a previously developed mathematical model that predicts melting of a thin substrate layer.

Type
Articles
Copyright
Copyright © Materials Research Society 1989

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References

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