Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-28T01:31:17.887Z Has data issue: false hasContentIssue false
  • English
  • Français

Low temperature perovskite formation of lead zirconate titanate thin films by a seeding process

Published online by Cambridge University Press:  31 January 2011

Chi Kong Kwok  and
Seshu B. Desu
Chi Kong Kwok
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061
Seshu B. Desu
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061
Get access

Abstract

A two-step seeding process has been developed to lower the transformation temperature and modify the grain structure of ferroelectric lead zirconate titanate (PZT) thin films with high Zr/Ti ratio. Previous study has shown that nucleation is the rate-limiting step for the perovskite formation. Therefore, any process that enhances the kinetics of nucleation is likely to decrease the transformation temperature. In this process, a very thin (45 nm) seeding layer of PbTiO3, which has a low effective activation energy for perovskite formation, was used to provide nucleation sites needed for the low temperature perovskite formation. In this study, we have shown that the pyrochlore-to-perovskite phase transformation temperature of PbZrxTi1−xO3 films of high Zr/Ti ratio (e.g., x = 53/47) can be lowered by as much as 100 °C. The grain size of these films can also be substantially modified by this two-step approach.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 2 , February 1993 , pp. 339 - 344
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Sawaguchi, E.J. Phys. Soc. Jpn. 8, 615 (1953).Google Scholar
2Chen, K and Mackenzie, J. in Better Ceramics Through Chemistry IV, edited by Zelinsky, B.J.J.Brinker, C.J.Clark, D. and Ulrich, D.R. (Mater. Res. Soc. Symp. Proc. 180, Pittsburgh, PA, 1990), p. 663.Google Scholar
3Kwok, C. and Desu, S.Ceramic Transactions: Ferroelectric edited by Bhalla, A. (Am. Ceram. Soc. Westerville, OH, 1992), Vol. 25, p. 73.Google Scholar
4Peng, C. and Desu, S. in Ferroelectric Thin Films II, edited Kingon, A. I.Meyers, E. R. and Tuttle, B. (Mater. Res. Soc. Symp)Google Scholar
5Kumagai, M. and Messing, G.J. Am. Ceram. Soc. 67 (11), C230 (1984).CrossRefGoogle Scholar
6Miller, K. and Lange, F.J. Mater. Res. 6, 2387 (1991).Google Scholar
7Yi, G. and Sayer, M.Ceram. Bull. 70 (7), 1173 (1991).Google Scholar
8Kwok, C. and Desu, S.Ceramic Transactions: Ferroelectric Films, edited by Bhalla, A. (Am. Ceram. Soc Westerville, OH, 1992), Vol. 25, p. 85.Google Scholar
9Powder Diffraction File, Inorganic Phase, JCPDS (International Center for Diffraction Data, Swarthmore, PA, 1986), #6-452, #33-784, and #10–173.Google Scholar
10Desu, S.Peng, C.Kammerdiner, L. and Schuele, P. in Ferroelectrie Thin Films, edited by Myers, E. R. and Kingon, A. I. (Mater, Res. Soc. Symp. Proc. 200, Pittsburgh, PA, 1990), p. 319.Google Scholar