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Low temperature solid-state epitaxy of LiNbO3 films by a dipping-pyrolysis process using Li-trifluoroacetate

Published online by Cambridge University Press:  31 January 2011

T. Manabe ,
I. Yamaguchi ,
W. Kondo ,
T. Kumagai  and
S. Mizuta
T. Manabe
Affiliation:
National Institute of Materials and Chemical Research, Higashi 1–1, Tsukuba, Ibaraki 305–8565, Japan
I. Yamaguchi
Affiliation:
National Institute of Materials and Chemical Research, Higashi 1–1, Tsukuba, Ibaraki 305–8565, Japan
W. Kondo
Affiliation:
National Institute of Materials and Chemical Research, Higashi 1–1, Tsukuba, Ibaraki 305–8565, Japan
T. Kumagai
Affiliation:
National Institute of Materials and Chemical Research, Higashi 1–1, Tsukuba, Ibaraki 305–8565, Japan
S. Mizuta
Affiliation:
National Institute of Materials and Chemical Research, Higashi 1–1, Tsukuba, Ibaraki 305–8565, Japan
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Abstract

Epitaxially grown LiNbO3 thin films were prepared on sapphire(012) (R-plane) substrates by a dipping-pyrolysis process using two kinds of lithium sources, i.e., Li-2-ethylhexanoate and Li-trifluoroacetate, which are pyrolyzed in air to Li2CO3 and LiF, respectively. Crystallization temperature and alignment of LiNbO3 films on sapphire(012) were found to depend greatly on the Li sources. Dominantly [100]-oriented epitaxial LiNbO3 films were crystallized at around 600 °C using 2-ethylhexanoate, whereas dominantly [012]-oriented epitaxial LiNbO3 films resulted at a temperature as low as 400 °C using trifluoroacetate.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 4 , April 1998 , pp. 834 - 836
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1.Nashimoto, K. and Cima, M. J., Mater. Lett. 10, 348 (1991).CrossRefGoogle Scholar
2.Terabe, K., Iyi, N., Kitamura, K., and Kimura, S., J. Mater. Res. 10, 1779 (1995).CrossRefGoogle Scholar
3.Hirano, S., Yogo, T., Kikuta, K., Sakamoto, W., and Takeuchi, Y., Mater. Sci. Eng. B41, 117 (1996).CrossRefGoogle Scholar
4.Manabe, T., Kim, S., Yamaguchi, I., Kumagai, T., and Mizuta, S., J. Natl. Inst. Mater. & Chem. Res. 4, 153 (1996) (in Japanese).Google Scholar
5.Manabe, T., Kim, S., Yamaguchi, I., Mizuta, S., and Kumagai, T., Trans. Mater. Res. Soc. Jpn. 20, 599 (1996).Google Scholar
6.Gupta, A., Jagannathan, R., Cooper, E. I., Geiss, E. A., Landman, J. I., and Hussey, B. W., Appl. Phys. Lett. 52, 2077 (1988).CrossRefGoogle Scholar
7.Fujimura, N., Kakinoki, M., Tsuboi, H., and Ito, T., J. Appl. Phys. 75, 2169 (1994).CrossRefGoogle Scholar