Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-14T22:47:25.110Z Has data issue: false hasContentIssue false
  • English
  • Français

Low temperature synthesis of thin films of carbon nitride

Published online by Cambridge University Press:  03 March 2011

M. Ghanashyam Krishna ,
K.R. Gunasekhar  and
S. Mohan
M. Ghanashyam Krishna
Affiliation:
Vacuum and Thin Films Laboratory, Instrumenmtation and Services Unit, Indian Institute of Science, Bangalore 560012, India
K.R. Gunasekhar
Affiliation:
Vacuum and Thin Films Laboratory, Instrumenmtation and Services Unit, Indian Institute of Science, Bangalore 560012, India
S. Mohan
Affiliation:
Vacuum and Thin Films Laboratory, Instrumenmtation and Services Unit, Indian Institute of Science, Bangalore 560012, India
Get access

Abstract

Thin films of carbon nitride have been prepared using triode ion plating. It has been observed that the compound formation occurs at ambient substrate temperature itself. Though the films are completely amorphous at temperatures below 900 °C. they are hard and transparent down to a wavelength of 200 nm. It has also been observed that the film transmission can be modulated using nitrogen ion flux and partial pressure. The IR transmission spectra clearly show the C-N stretch band around 2200 cm−1. Onset of crystallization, as evidenced from electron diffraction, occurs around 900 °C substrate temperature.

Type
Communication
Information
Journal of Materials Research , Volume 10 , Issue 5 , May 1995 , pp. 1083 - 1085
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Liu, A. Y. and Cohen, M. L., Science 245, 841 (1989).CrossRefGoogle Scholar
2Chen, M. Y., Lin, X., Dravid, V. P., Chung, Y. W., Wong, M. S., and Sproul, W. D., Surf. Coatings Technol. 54/55, 360 (1992); Tribol. Trans. 36, 491 (1993).CrossRefGoogle Scholar
3Niu, C., Lu, Y. Z., and Lieber, CM., Science 261, 334 (1993).CrossRefGoogle Scholar
4Matsumoto, O., Kotaki, T., Shikano, H., Takemura, K., and Tanaka, S., J. Electrochem. Soc. 141, L16 (1994).CrossRefGoogle Scholar
5Torng, C. J., Sivertsen, J. M., Judy, J. H., and Chang, C., J. Mater. Res. 5, 2490 (1990).CrossRefGoogle Scholar
6Kumar, S. and Tansley, T., Solid State Comtnun. 88, 803 (1993).CrossRefGoogle Scholar
7Ahmed, N.A. G., Ion Plating Technology-Developments and Applications (John Wiley and Sons, New York, 1986).Google Scholar
8Gunasekhar, K. R., Ph.D. Thesis, Indian Institute of Science, Bangalore, India (1991).Google Scholar
9Gunasekhar, K. R. and Mohan, S., Vacuum 42, 661 (1991).CrossRefGoogle Scholar
10Marton, D., Boyd, K. J., Al-Bayati, A.H., Todorv, S. S., and Rabalais, J. W., Phys. Rev. Lett. 73, 118 (1994).CrossRefGoogle Scholar