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Low-temperature transport properties of polycrystalline Ba8Ga16Sn30

Published online by Cambridge University Press:  01 December 2004

G.S. Nolas ,
J.L. Cohn ,
J.S. Dyck ,
C. Uher ,
G.A. Lamberton  and
T.M. Tritt
G.S. Nolas
Affiliation:
Department of Physics, University of South Florida, Tampa, Florida 33620
J.L. Cohn
Affiliation:
Department of Physics, University of Miami, Coral Gables, Florida 33124
J.S. Dyck
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109
C. Uher
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109
G.A. Lamberton
Affiliation:
Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634
T.M. Tritt
Affiliation:
Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634
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Abstract

Low-temperature resistivity, Seebeck coefficient, thermal conductivity, and heat-capacity measurements were performed on Ba8Ga16Sn30. This compound crystallizes in a cubic type-VIII clathrate phase, space group I¯43m, with the Baatoms residing inside voids created by a tetrahedrally bonded network of Ga andSn atoms. Ba8Ga16Sn30 exhibits semiconducting behavior above 150 K with a low thermal conductivity and thus may hold potential for thermoelectric applications.

Keywords

Electrical propertiesSemiconductorThermoelectricity
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 12 , December 2004 , pp. 3556 - 3559
Copyright
Copyright © Materials Research Society 2004

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