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Luminescence distribution of Yb-doped Ca-α-SiAlON phosphors

Published online by Cambridge University Press:  31 January 2011

B. Dierre
Affiliation:
National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan; and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-0044, Japan
X.L. Yuan
Affiliation:
National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
N. Hirosaki
Affiliation:
National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
T. Kimura
Affiliation:
National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
R-J. Xie
Affiliation:
National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
T. Sekiguchi*
Affiliation:
National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan; and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-0044, Japan
*
a)Address all correspondence to this author. e-mail: Sekiguchi.Takashi@nims.go.jp
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Abstract

Luminescence properties of Yb-doped Ca-α-SiAlON phosphors with composition of Ca1−xYbxSi12−(m+n)Alm+nOnN16−n were investigated by using cathodoluminescence (CL). The ratio of Yb to Ca was kept constant while the host lattice was changed by replacing m+n(Si–N) bonds with m(Al–N) and n(Al–O) bonds. The luminescence of these phosphors consists of three peaks in the ultraviolet (UV), green (VIS), and infrared (IR) regions, which are attributed to the emissions from secondary phases, Yb2+ and Yb3+, respectively. The UV emission depends on the Si/Al ratio: the UV peak is centered at 310 nm for the Si-rich mix and at 360 nm for the Al-rich mix. We have found that Yb exists in the divalent state in α-SiAlON and in the trivalent state in the secondary phases.

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Articles
Copyright
Copyright © Materials Research Society 2008

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References

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