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Mechanical properties and dislocation dynamics of GaP

Published online by Cambridge University Press:  31 January 2011

Ichiro Yonenaga  and
Koji Sumino
Ichiro Yonenaga
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
Koji Sumino
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
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Abstract

Mechanical properties of GaP crystals are investigated in the temperature range 600–900 °C by means of compression tests. Stress-strain characteristics of a GaP crystal in the temperature range 600–800 °C are very similar to those of a GaAs crystal in the temperature range 450–600 °C. The dynamic state of dislocations during deformation is determined by means of the strain-rate cycling technique. The deformation of GaP is found to be controlled by the dislocation processes the same as those in other kinds of semiconductors such as Si, Ge, and GaAs. The velocity v of dislocations that control deformation is deduced to be v = v0 τ exp(–2.2 eV/kT) as a function of the stress τ and the temperature T, where v0 is a constant and k the Boltzmann constant. The Portevin-LeChatelier effect is observed in the stress-strain behavior in the deformation at high temperatures and under low strain rates, which may be attributed to the locking of dislocations by impurities or impurity-defect complexes.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 2 , April 1989 , pp. 355 - 360
Copyright
Copyright © Materials Research Society 1989

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References

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