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Mechanics of shaped crystal growth from the melt

Published online by Cambridge University Press:  31 January 2011

John C. Lambropoulos  and
Chien-Hsing Wu
John C. Lambropoulos
Affiliation:
Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627-0132
Chien-Hsing Wu
Affiliation:
Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627-0132
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Abstract

We present the numerical formulation of the thermal stress driven steady-state dislocation generation during the growth of shaped crystals from the melt, with Czochralski (CZ) growth of solid cylinder III–V compound semiconductors as an example. We use and compare the Haasen–Alexander model, coupling dislocation multiplication and creep strain rates, and the Jordan model, based on thermoelastic stresses. Growth parameters may be chosen so as to produce an overall approximately flat interface, leading to reduced dislocation density in the majority of the crystal's cross section. Calculation of final dislocation density requires the initial dislocation density and all stress components along the solid-liquid interface, microstructural features which depend on the physical processes leading to solidification. The final dislocation density is not sensitive to the initial dislocation density along the solid-liquid interface, but strongly depends on the interface stress. Significant stress relaxation at the interface is required to produce experimentally observed “W” shaped dislocation patterns. Crystal growth direction and crystalline anisotropy couple elastic (lattice) and plastic (slip systems) crystalline anisotropy.

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Articles
Information
Journal of Materials Research , Volume 11 , Issue 9 , September 1996 , pp. 2163 - 2176
Copyright
Copyright © Materials Research Society 1996

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