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Mechanisms and kinetics of ion implantation

Published online by Cambridge University Press:  31 January 2011

Nghi Q. Lam  and
Gary K. Leaf
Nghi Q. Lam
Affiliation:
Argonne National Laboratory, Argonne, Illinois 60439
Gary K. Leaf
Affiliation:
Argonne National Laboratory, Argonne, Illinois 60439
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Abstract

The evolution of the implant distribution during ion implantation at elevated temperatures has been theoretically studied using a comprehensive kinetic model. In the model foreign atoms, implanted into both interstitial and substitutional sites of the host lattice, could interact with implantation-induced point defects and with extended sinks such as the bombarded surface. The synergistic effects of preferential sputtering, radiation-enhanced diffusion, and radiation-induced segregation, as well as the influence of nonuniform defect production, were taken into account. The bombarded surface was allowed to move in either direction, − x or + x, depending on ion energy, i.e., on the competition between the rates of ion deposition and sputtering. The moving surface was accounted for by means of a mathematical technique of immobilizing the boundary. The ion implantation process was cast into a system of five coupled partial differential equations, which could be solved numerically using a suitable technique. Sample calculations were performed for two systems: Si+ and Al+ implantations into Ni. It has been known from previous studies that in irradiated Ni, Si atoms segregate in the same direction as the defect fluxes, whereas Al solutes migrate in the opposite direction. Thus the effects of different segregation mechanisms, as well as the influence of target temperature, ion energy, and implantation rate on the evolution of implant concentrations in time and space, could be examined with the present model.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 2 , April 1986 , pp. 251 - 267
Copyright
Copyright © Materials Research Society 1986

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References

1Hirvonen, J. K. and Clayton, C. R., in Surface Modification and Alloying, NATO Series on Materials Science, edited b y Poate, J. M., Foti, G., and Jacobson, D. C. (Plenum, New York, 1983), p. 323.CrossRefGoogle Scholar
2Sigmund, P., J. Appl. Phys. 50, 7261 (1979).CrossRefGoogle Scholar
3Sigmund, P., Phys. Rev. 184, 383 (1969).CrossRefGoogle Scholar
4Johnson, R. A. and Lam, N. Q., Phys. Rev. B 13, 4364 (1976); J. Nucl. Mater. 69-70, 424 (1978).Google Scholar
5Lam, N. Q., Okamoto, P. R., and Johnson, R. A., J. Nucl. Mater. 74, 101 (1978).Google Scholar
6Okamoto, P. R. and Rehn, L. E., J. Nucl. Mater. 83, 2 (1979).CrossRefGoogle Scholar
7Wiedersich, H. and Lam, N. Q., in Phase Transformations during Irradiation, edited by Nolfi, F. V. Jr., (Applied Science, London, 1983), p. 1.Google Scholar
8Lam, N. Q. and Wiedersich, H., J. Nucl. Mater. 103-104, 433 (1982).Google Scholar
9Marwick, A. D., in Ref. 1, p. 211.Google Scholar
10Wiedersich, H., in Ref. 1, p. £261.Google Scholar
11Dearnaley, G., Rad. Effects 63, 25 (1982).Google Scholar
12Rehn, L. E., Lam, N. Q., and Wiedersich, H., Mater. Res. Soc. Symp. Proc. 27, 37 (1984).Google Scholar
13Biersack, J. P. and Haggmark, L. G., Nucl. Instrum. Methods 174, 257 (1980).CrossRefGoogle Scholar
14Okamoto, P. R., Rehn, L. E., and Averback, R. S., J. Nucl. Mater. 133-134, 373 (1985).Google Scholar
15Johnson, R. A., Phys. Rev. 145, 423 (1966).Google Scholar
16Dederichs, P. D., Lehmann, C., Schober, H. R., Scholz, A., and Zeller, R., J. Nucl. Mater. 69-70, 176 (1978).Google Scholar
17Lam, N. Q. and Johnson, R. A., Nucl. Metall. 20, 121 (1976).Google Scholar
18Barbu, A., Acta Metall. 28, 499 (1980) .CrossRefGoogle Scholar
19Hindmarsh, A. C., in Scientific Computing, edited by Steple-man, R. S., Carver, M., Peskin, R., Ames, M. F., and Vichnevetsky, R. (North-Holland, Amsterdam, 1983), p. 55.Google Scholar
20Rehn, L. E. and Okamoto, P. R., in Ref. 7, p. 247.Google Scholar
21Young, F. W., J. Nucl. Mater. 69-70, 310 (1978).Google Scholar
22Lam, N. Q., Okamoto, P. R., and Wiedersich, H., J. Nucl. Mater. 78, 408 (1978).CrossRefGoogle Scholar
23Siegel, R. W., in Point Defects and Defect Interactions in Metals, edited by Takamura, J., Doyama, M., and Kiritani, M. (University of Tokyo, Tokyo, 1982), p. 533.Google Scholar
24Gupta, R. P., Phys. Rev. B 22, 5900 (1980).Google Scholar
25Okamoto, P. R., Rehn, L. E., Averback, R. S., Robrock, K.-H., and Wiedersich, H., in Ref. 23, p. 946.Google Scholar
26Andersen, H. H. and Bay, H. L., in Sputtering by Particle Bombardment, edited by Behrisch, R. (Springer, Heidelberg, 1981), p. 145.CrossRefGoogle Scholar
27Mayer, S. G. B., Milillo, F. F., and Potter, D. I., Mater. Res. Soc. Symp. Proc. 39, 521 (1985).Google Scholar
28Watkins, R. E. J., Rad. Effects 84, 27 (1985).Google Scholar
29Rastogi, P. K. and Ardell, A. J., Acta Metall. 19, 321 (1971).CrossRefGoogle Scholar
30Lam, N. Q. and Leaf, G. K., Mater. Res. Soc. Symp. Proc. (to be published).Google Scholar