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Microstructural and Ferroelectric Properties of a Chemical Solution Deposited Epitaxial PbZr0.5 Ti0.5O3 Thin Film on a SrRuO3/SrTiO3 Substrate

Published online by Cambridge University Press:  31 January 2011

J. H. Kim ,
A. T. Chien ,
F. F. Lange  and
L. Wills
J. H. Kim
Affiliation:
Materials Department and Materials Research Laboratory, College of Engineering, University of California, Santa Barbara, California 93106
A. T. Chien
Affiliation:
Materials Department and Materials Research Laboratory, College of Engineering, University of California, Santa Barbara, California 93106
F. F. Lange
Affiliation:
Materials Department and Materials Research Laboratory, College of Engineering, University of California, Santa Barbara, California 93106
L. Wills
Affiliation:
Solid State Technology Laboratory, Solid State Materials Department, Hewlett-Packard Labs, 3500 Deer Creek Rd., 26M-7, Palo Alto, California 94304
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Abstract

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on top of a SrRuO3 epitaxial electrode layer on a (100) SrTiO3 substrate by the chemical solution deposition method at 600 °C. The microstructure of the PZT thin film was investigated by x-ray diffraction and transmission electron microscopy, and the ferroelectric properties were measured using the Ag/PZT/SRO capacitor structure. The PZT thin film has the epitaxial orientational relationship of (001) [010]PZT ║ (001) [010]SRO ║ (001) [010]STO with the substrate. The remnant (Pr ) and saturation polarization (Ps) density were measured to be Pr ~ 51.4 µC/cm2 and Ps ~ 62.1 µC/cm2 at 5 V, respectively. Ferroelectric fatigue measurements show that the net-switching polarization begins to drop (to 98% of its initial value) after 7 × 108 cycles.

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Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 4 , April 1999 , pp. 1190 - 1193
Copyright
Copyright © Materials Research Society 1999

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