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Microstructural study of growth of a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x trilayered film by pulsed laser deposition

Published online by Cambridge University Press:  31 January 2011

Y. H. Li ,
A. Staton-Bevan ,
J. A. Kilner ,
Z. Trajanovic  and
T. Venkatesan
Y. H. Li
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, United Kingdom
A. Staton-Bevan
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, United Kingdom
J. A. Kilner
Affiliation:
Department of Materials, Imperial College, London SW7 2BP, United Kingdom
Z. Trajanovic
Affiliation:
Department of Physics, University of Maryland, College Park, Maryland 20742
T. Venkatesan
Affiliation:
Department of Physics, University of Maryland, College Park, Maryland 20742
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Abstract

The growth process of a YBCO/LaAlO3/YBCO trilayered film made by pulsed laser deposition has been studied by high resolution transmission electron microscopy (HRTEM). The high resolution images of the cross-section samples have shown that a 7 nm layer of LaAlO3 has been grown epitaxially between c-axis oriented YBCO layers having the nominal thickness of 250 nm. A stacking fault in the LaAlO3 layer may introduce a stacking fault into the YBCO layer, which may form nucleation sites for α-axis oriented grains. A second phase had been formed at the interface between the LaAlO3 layer and the lower YBCO layer, which has been identified by image simulation and energy dispersive x-ray (EDX) analysis as a new tetragonal La–Al–Cu–O phase based on LaAlO3 in which some of Al atoms have been replaced by Cu. The approximate lattice parameters of the new phase are a = 0.38 nm and c = 0.76 nm. However, no second phase was found at the interface between the lower YBCO layer and the LaAlO3 substrate.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 12 , December 1996 , pp. 2971 - 2975
Copyright
Copyright © Materials Research Society 1996

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References

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