Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T06:57:43.471Z Has data issue: false hasContentIssue false

Migration behavior of indium atoms in Cu/Sn–52In/Cu interconnects during electromigration

Published online by Cambridge University Press:  21 September 2015

Mingliang Huang*
Affiliation:
Electronic Packaging Materials Laboratory, School of Materials Science & Engineering, Dalian University of Technology, Dalian, Liaoning, 116024, China
Zhijie Zhang
Affiliation:
Electronic Packaging Materials Laboratory, School of Materials Science & Engineering, Dalian University of Technology, Dalian, Liaoning, 116024, China
Ning Zhao
Affiliation:
Electronic Packaging Materials Laboratory, School of Materials Science & Engineering, Dalian University of Technology, Dalian, Liaoning, 116024, China
Fan Yang
Affiliation:
Electronic Packaging Materials Laboratory, School of Materials Science & Engineering, Dalian University of Technology, Dalian, Liaoning, 116024, China
*
a)Address all correspondence to this author. e-mail: huang@dlut.edu.cn
Get access

Abstract

The interfacial reactions in Cu/Sn–52In/Cu interconnects during solid–solid (S–S) and liquid–solid (L–S) electromigration (EM) under a current density of 2.0 × 104 A/cm2 at 90 and 150 °C have been in situ studied using synchrotron radiation real-time imaging technology. The In atoms directionally migrate toward the cathode due to the back-stress induced by the preferential migration of the Sn atoms over the In atoms toward the anode during the S–S EM, resulting in the segregation of the Sn and In atoms at the anode and cathode, respectively. During the L–S EM, however, the In atoms directionally migrate toward the anode due to the negative effective charge number (Z*) of In rather than the back-stress. The polarity effect, i.e., the intermetallic compounds growing continuously at the anode while becoming thinner at the cathode, is more significant during the L–S EM than the S–S EM. Furthermore, the consumption rate of the cathode Cu during the L–S EM is three orders of magnitude higher than that in the case of the S–S EM because of the significantly higher EM-induced atomic flux in the liquid solder. The migrations of the Sn, In, and Cu atoms are discussed in terms of diffusion flux.

Type
Articles
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

Contributing Editor: C. Robert Kao

References

REFERENCES

Jung, Y. and Yu, J.: Electromigration induced Kirkendall void growth in Sn-3.5Ag/Cu solder joints. J. Appl. Phys. 115, 083708 (2014).Google Scholar
Chen, C., Tong, H.M., and Tu, K.N.: Electromigration and thermomigration in Pb-free flip-chip solder joints. Annu. Rev. Mater. Sci. 40, 531 (2010).Google Scholar
Lin, Y.H., Hu, Y.C., Tsai, C.M., Kao, C.R., and Tu, K.N.: In situ observation of the void formation-and-propagation mechanism in solder joints under current-stressing. Acta Mater. 53, 2029 (2005).Google Scholar
Cahoon, J.R.: A modified “hole” theory for solute impurity diffusion in liquid metals. Metall. Mater. Trans. A 28, 583 (1997).Google Scholar
Huang, M.L., Zhang, Z.J., Zhao, N., and Zhou, Q.: A synchrotron radiation real-time in situ imaging study on the reverse polarity effect in Cu/Sn–9Zn/Cu interconnect during liquid–solid electromigration. Scr. Mater. 68, 853 (2013).Google Scholar
Huang, M.L., Zhou, Q., Zhao, N., and Zhang, Z.J.: Abnormal diffusion behavior of Zn in Cu/Sn–9wt.% Zn/Cu interconnects during liquid–solid electromigration. J. Electron. Mater. 42, 2975 (2013).Google Scholar
Huang, M.L., Zhou, Q., Zhao, N., Liu, X.Y., and Zhang, Z.J.: Reverse polarity effect and cross-solder interaction in Cu/Sn–9Zn/Ni interconnect during liquid-solid electromigration. J. Mater. Sci. 49, 1755 (2014).Google Scholar
Huang, M.L., Zhang, Z.J., Zhao, N., and Yang, F.: In situ study on reverse polarity effect in Cu/Sn–9Zn/Ni interconnect undergoing liquid–solid electromigration. J. Alloys Compd. 619, 667 (2015).Google Scholar
Gu, X. and Chan, Y.C.: Electromigration in line-type Cu/Sn–Bi/Cu solder joints. J. Electron. Mater. 37, 1721 (2008).Google Scholar
Liao, C.N., Chung, C.P., and Chen, W.T.: Electromigration-induced Pb segregation in eutectic Sn–Pb molten solder. J. Mater. Res. 20, 3425 (2005).Google Scholar
Huang, J.R., Tsai, C.M., Lin, Y.W., and Kao, C.R.: Pronounced electromigration of Cu in molten Sn-based solders. J. Mater. Res. 23, 250 (2008).Google Scholar
Chuang, T.H., Yu, C.L., Chang, S.Y., and Wang, S.S.: Phase identification and growth kinetics of the intermetallic compounds formed during In–49Sn/Cu soldering reactions. J. Electron. Mater. 31, 640 (2002).Google Scholar
Daghfal, J.P. and Shang, J.K.: Current-induced phase partitioning in eutectic indium-tin Pb-free solder interconnect. J. Electron. Mater. 36, 1372 (2007).Google Scholar
Chen, L.D., Huang, M.L., and Zhou, S.M.: Effect of electromigration on intermetallic compound formation in line-type Cu/Sn/Cu interconnect. J. Alloys Compd. 504, 535 (2010).Google Scholar
Gan, H. and Tu, K.N.: Polarity effect of electromigration on kinetics of intermetallic compound formation in Pb-free solder V-groove samples. J. Appl. Phys. 97, 063514 (2005).Google Scholar
Conrad, H.: Effect of electric current on solid-state phase transformations in metals. Mater. Sci. Eng., A 287, 227 (2000).Google Scholar
Ho, P.S. and Kwok, T.: Electromigration in metals. Rep. Prog. Phys. 52, 301 (1989).Google Scholar
Huntington, H.B. and Gron, A.R.: Current-induced marker motion in gold wires. J. Phys. Chem. Solids 20, 76 (1961).Google Scholar
Kumar, P., Howarth, J., and Dutta, I.: Electric current induced flow of liquid metals: Mechanism and substrate-surface effects. J. Appl. Phys. 115, 044915 (2014).Google Scholar
Smolin, M.D. and Frantsevich, I.N.: Application of the method of electric transport to the study of metals and alloys. Sov. Phys-Sol 3, 1536 (1961).Google Scholar