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A Novel Organic Complex Thin Film for Rewritable Optical Storage

Published online by Cambridge University Press:  31 January 2011

S. M. Hou ,
M. Ouyang ,
L. Lin ,
Z. Q. Xue ,
W. J. Yang ,
H. Y. Chen  and
H. X. Zhang
S. M. Hou*
Affiliation:
Department of Electronics, Peking University, Beijing 100871, People's Republic of China
M. Ouyang
Affiliation:
Department of Electronics, Peking University, Beijing 100871, People's Republic of China
L. Lin
Affiliation:
Department of Electronics, Peking University, Beijing 100871, People's Republic of China
Z. Q. Xue
Affiliation:
Department of Electronics, Peking University, Beijing 100871, People's Republic of China
W. J. Yang
Affiliation:
College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
H. Y. Chen
Affiliation:
College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
H. X. Zhang
Affiliation:
Beijing Laboratory of Vacuum Physics, Center of Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China
*
a)Address all correspondence to this author. e-mail: smhou@ibm320h.phy.pku.edu.cn
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Abstract

Erasable optical storage on an organic complex thin film m-nitrobenzal malononitrile and diamine benzene (m-NBMN/DAB) has been demonstrated. High contrast pattern can be produced by 780 nm laser pulses and can be erased by heating. The static optical recording characteristics were studied by the homemade static characterizer, and the structural properties of the thin films were investigated by the high resolution scanning electron microscope (HRSEM) and transmission electron microscope (TEM).

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 4 , April 1999 , pp. 1634 - 1637
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Chen, Q., Gu, D., and Gan, F., Solid-State Electron. 37, 1768 (1994).CrossRefGoogle Scholar
2.Hirotsune, A., Miyauchi, Y., and Terao, M., Appl. Phys. Lett. 66, 2312 (1995).CrossRefGoogle Scholar
3.Potember, R.S., Poehler, T. O., and Cowan, D.O., Appl. Phys. Lett. 34, 405 (1979).CrossRefGoogle Scholar
4.Potember, R.S., Poehler, T.O., Rappa, A., Cowan, D. O., and Bloch, A. N., J. Am. Ceram. Soc. 102, 3659 (1980).Google Scholar
5.Potember, R.S., Poehler, T. O., Cowan, D. O., Bloch, A.N., Brant, P., and Carter, F.L., Chem. Scripta 17, 1753 (1981).Google Scholar
6.Potember, R. S., Poehler, T. O., and Benson, R.C., Appl. Phys. Lett. 41, 548 (1982).CrossRefGoogle Scholar
7.Hoffman, R. C. and Potember, R. S., Appl. Opt. 28, 1417 (1989).CrossRefGoogle Scholar
8.Hua, Z.Y. and Chen, G.R., Vacuum 43, 1019 (1992).CrossRefGoogle Scholar
9.Nishio, M. Y., Tachibana, H., Nakamura, T., Kawabata, Y., and Samura, H., Chem. Lett., 1021 (1991).Google Scholar
10.Yamagguchi, S., Vianda, C. A., and Potember, R. S., J. Vac. Sci. Technol. B 9, 1129 (1991).CrossRefGoogle Scholar
11.Ouyang, M., Wang, K.Z., Zhang, H.X., Xue, Z.Q., Huang, C.H., and Qiang, D., Appl. Phys. Lett. 68, 2441 (1996).CrossRefGoogle Scholar
12.Ouyang, M., Xue, Z.Q., Wang, K.Z., Wu, Q.D., and Qiang, D., J. Vac. Sci. Technol. B 15, 1304 (1997).CrossRefGoogle Scholar
13.Xue, Z.Q., Ouyang, M., Wang, K.Z., Zhang, H.X., and Huang, C.H., Thin Solid Films 288, 296 (1996).CrossRefGoogle Scholar
14.Wang, K.Z., Ouyang, M., Zhang, H.X., Xue, Z.Q., Huang, C.H., and Qiang, D., Acta Scientarium Naturalium Universutatis Pekinensis 32, 628 (1996).Google Scholar
15.Wang, K.Z., Xue, Z. Q., Ouyang, M., Wang, D.W., Zhang, H.X., and Huang, C. H., Chem. Phys. Lett. 243, 217 (1995).CrossRefGoogle Scholar
16.Wang, K.Z., Xue, Z. Q., Ouyang, M., Zhang, H.X., and Huang, C.H., J. Mater. Sci. Lett. 15, 977 (1996).Google Scholar
17.Wang, K.Z., Xue, Z. Q., Ouyang, M., Zhang, H.X., and Huang, C.H., Solid State Commun. 96, 481 (1996).CrossRefGoogle Scholar
18.Ma, L. P., Song, Y. L., Gao, H. J., Zhao, W. B., Chen, H. Y., Xue, Z. Q., and Pang, S.J., Appl. Phys. Lett. 69, 3752 (1996).CrossRefGoogle Scholar
19.Hua, Z. Y. and Chen, G. R., Vacuum Sci. Technol. (China) 12, 9 (1992).Google Scholar
20.Wang, K.Z., Zhang, H.X., Wang, D.W., and Xue, Z.Q., Vacuum Sci. Technol. (China) 16, 277 (1996).Google Scholar