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Novel Time-modulated Chemical Vapor Deposition Process for Growing Diamond Films

Published online by Cambridge University Press:  31 January 2011

Q. H. Fan ,
N. Ali ,
Y. Kousar ,
W. Ahmed  and
J. Gracio
Q. H. Fan
Affiliation:
Department of Mechanical Engineering, University of Aveiro, 3810 Aveiro, Portugal
N. Ali
Affiliation:
Department of Mechanical Engineering, University of Aveiro, 3810 Aveiro, Portugal
Y. Kousar
Affiliation:
Department of Mechanical Engineering, University of Aveiro, 3810 Aveiro, Portugal
W. Ahmed
Affiliation:
Department of Chemistry and Materials, Manchester Metropolitan University, Manchester, United Kingdom
J. Gracio*
Affiliation:
Department of Mechanical Engineering, University of Aveiro, 3810 Aveiro, Portugal
*
a)Address all correspondence to this author. e-mail: jgracio@mec.ua.pt
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Abstract

Smooth polycrystalline diamond films were deposited onto silicon substrates using a newly developed time-modulated chemical vapor deposition (TMCVD) process. The distinctive feature of the TMCVD process involves pulsing the hydrocarbon gas, methane, at different flow rates for varying durations into the vacuum reactor during the chemical vapor deposition (CVD) process. Generally, CVD diamond films display nonuniformity in the crystal sizes and surface roughness along the film growth profile. The TMCVD method was specifically developed to (i) deposit smooth films, (ii) control film microstructure and morphology, and (iii) improve film reliability. We show that the TMCVD process produces diamond films with improved surface smoothness as compared to films of similar thickness produced by conventional CVD method under similar conditions. Surprisingly perhaps, the TMCVD method gave growth rates much higher than the conventional CVD method without reducing the film quality as revealed by the SEM micrographs and micro-Raman spectra.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 17 , Issue 7 , July 2002 , pp. 1563 - 1566
Copyright
Copyright © Materials Research Society 2002

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