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Observations of structural order in ion-implanted amorphous silicon

Published online by Cambridge University Press:  31 January 2011

Ju-Yin Cheng ,
J. M. Gibson  and
D. C. Jacobson
Ju-Yin Cheng
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801
J. M. Gibson
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
D. C. Jacobson
Affiliation:
Bell Laboratory, Lucent Technology, Murray Hill, New Jersey 07974
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Abstract

Medium-range order in ion-implanted amorphous silicon has been observed using fluctuation electron microscopy. In fluctuation electron microscopy, variance of dark-field image intensity contains the information of high-order atomic correlations, primarily in medium-range order length scale (1–3 nm). Thermal annealing greatly reduces the order and leaves a random network. It appears that the free energy change previously observed on relaxation may therefore be associated with randomization of the network. In this paper, we discuss the origin of the medium-range order during implantation, which can be interpreted as a paracrystalline state, that is, a disordered network enclosing compacts of highly topologically ordered grains on the length scale of 1–3 nm with significant strain fields.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 16 , Issue 11 , November 2001 , pp. 3030 - 3033
Copyright
Copyright © Materials Research Society 2001

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