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On growth of epitaxial vanadium oxide thin film on sapphire (0001)

Published online by Cambridge University Press:  31 January 2011

Tsung-Han Yang ,
Chunming Jin ,
Ravi Aggarwal ,
R.J. Narayan  and
Jay Narayan
Tsung-Han Yang*
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, EB-I, Centennial Campus, Raleigh, North Carolina 27695-7907
Chunming Jin
Affiliation:
Joint Department of Biomedical Engineering, University of North Carolina, Chapel Hill, North Carolina 27599
Ravi Aggarwal
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, EB-I, Centennial Campus, Raleigh, North Carolina 27695-7907
R.J. Narayan
Affiliation:
Joint Department of Biomedical Engineering, University of North Carolina, Chapel Hill, North Carolina 27599
Jay Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, EB-I, Centennial Campus, Raleigh, North Carolina 27695-7907
*
a)Address all correspondence to this author. e-mail: tyang3@ncsu.edu
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Abstract

We report the characteristics of epitaxial growth and properties of vanadium oxide (VO2) thin films on sapphire (0001) substrates. Pulsed laser deposition was used to grow (002) oriented VO2 films on sapphire (0001). Transmission electron microscopy studies showed that the orientation relationship between the substrate and the thin film is: (002)f2∥(0006)sub3 and [010]f2 ∥sub. It was also established that VO2 has three different orientations in the film plane which are rotated by 60° from each other. The epitaxial growth of vanadium oxide on sapphire (0001) has been explained in the framework of domain matching epitaxy (DME). Electrical resistivity measurements as a function of temperature showed a sharp transition with a hysteresis width ˜5 °C, and large resistance change (˜1.5 × 104) from the semiconductor phase to the metal phase. It is interesting to note that in spite of large angle twin boundaries in these VO2 films, the SMT characteristics are better than those observed for polycrystalline films. The higher width of thermal hysteresis for the VO2 film on c-sapphire compared to a bulk single VO2 crystal and a single-crystal VO2 film on r-sapphire can be attributed to the existence of these large-angle twin grain boundaries. These findings can provide insight into the phase transformation characteristics of VO2, which has important applications in switching and memory devices.

Keywords

EpitaxyMetal-insulator transitionPhase transformation
Type
Materials Communications
Information
Journal of Materials Research , Volume 25 , Issue 3 , March 2010 , pp. 422 - 426
Copyright
Copyright © Materials Research Society 2010

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References

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