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On the formation of solid state crystallized intrinsic polycrystalline germanium thin films

Published online by Cambridge University Press:  31 January 2011

Zhiguo Meng ,
Zhonghe Jin ,
Gururaj A. Bhat ,
Paul Chu ,
Hoi S. Kwok  and
Man Wong
Zhiguo Meng
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Zhonghe Jin
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Gururaj A. Bhat
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Paul Chu
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
Hoi S. Kwok
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Man Wong
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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Abstract

A two-step heat treatment process has been employed to crystallize low pressure deposited thin films of amorphous germanium. Large grain p-type polycrystalline germanium with a Hall effect hole mobility of greater than 300 cm2/Vs has been obtained. Films with near intrinsic conductivity, necessary for the construction of practical enhancement-mode insulated-gate thin film transistors, were obtained by introducing phosphorus as a compensating dopant. High Hall effect electron mobility of 245 cm2/Vs has been measured on the resulting n-type polycrystalline germanium thin films.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 10 , October 1997 , pp. 2548 - 2551
Copyright
Copyright © Materials Research Society 1997

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References

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