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On the growth and composition of conductive filaments on the surface of As–Se–Te bulk glassy semiconductors

Published online by Cambridge University Press:  31 January 2011

E. Márquez ,
P. Villares  and
R. Jiménez-Garay
E. Márquez
Affiliation:
Departamento de Física, Facultad de Ciencias, Universidad de Cádiz, Apartado 40, Puerto Real, Cádiz, Spain
P. Villares
Affiliation:
Departamento de Física, Facultad de Ciencias, Universidad de Cádiz, Apartado 40, Puerto Real, Cádiz, Spain
R. Jiménez-Garay
Affiliation:
Departamento de Física, Facultad de Ciencias, Universidad de Cádiz, Apartado 40, Puerto Real, Cádiz, Spain
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Abstract

A memory (lock-on) phenomenon was observed in the semiconducting glasses belonging to the As–Se–Te system, and this phenomenon was studied through electrical, calorimetric, and x-ray diffraction methods. The structural characteristics were also correlated to the time it takes to reach the memory state. The growth process in composition As0.40Se0.30Te0.30 exhibited a dependence on electrode polarity in such a way that it began at the positive electrode and finished at the negative one. The growth speed of the conductive filament was found to be approximately 22μm s−1. The crystalline nature of the lock-on filament was confirmed, and the peaks corresponding to the x-ray diffraction pattern of the surface of a sample of composition As0.45 Se0.10Te0.45, partially covered by filaments, correspond to monoclinic As2Te3. The memory effects found agree with those predicted through Ovshinsky's criterion, as the average coordination numbers for the noncrystalline structures of the alloys analyzed are 2.4 and 2.3, respectively.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 2 , April 1988 , pp. 314 - 320
Copyright
Copyright © Materials Research Society 1988

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