Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-28T01:00:42.609Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical and electrical properties of Ge10+xSe40Te50−x thin film

Published online by Cambridge University Press:  31 January 2011

S. A. Fayek ,
M. El-Ocker  and
A. S. Hassanien
S. A. Fayek
Affiliation:
Solid State Department, National Center for Radiation Research and Technology (NCRRT), Nasr City, Cairo, Egypt
M. El-Ocker
Affiliation:
Physics Department, Faculty of Science, Al-Azhar University, Cairo, Egypt
A. S. Hassanien
Affiliation:
Basic Science Department, Faculty of Engineering Shoubra, Benha Branch, Zagazig University, Benha, Egypt
Get access

Abstract

Thin films with thickness 100 nm of Ge10+xSe40Te50−x (x ranging from 0.0 to 16.65 at.%) were formed by vacuum deposition at 1.33 × 10−4 Pa. The change in electrical resistivity of the films has been measured using the coplanar method. The measurements have been carried out in a temperature range between 400 and 142 K. The values of the electrical activation energies lie in the range of 0.18–0.38 eV. The optical absorption behavior of these ternary thin films was studied from the reflection and transmission. The optical band gap was found to be in the range of 0.90–1.11 eV and arose from indirect transitions. On the other hand, the width of the band tail Ee was found in the range 0.19–0.32 eV and exhibits opposite behavior. This behavior is believed to be associated with a defected bond of Te–Te and a cohesive energy (CE).

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 6 , June 2001 , pp. 1549 - 1553
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Hilton, A.R., Hayes, D.J., and Rechitin, M.D., J. Non-Cryst. Solids 17, 319 (1975).Google Scholar
2.Vasko, A.. 11th Int. Congr. Glass, Prague 5, 533 (1977).Google Scholar
3.Mahadevan, S., Gridhar, A., and Singh, A.K., J. Non-Cryst. Solids 103, 179 (1988).CrossRefGoogle Scholar
4.Wang, Z., Tu, C., Li, , and Chen, Q., J. Non-Cryst. Solids 191, 132 (1995).CrossRefGoogle Scholar
5.Mahadevan, S., Gridhar, A., and Singh, A.K., J. Non-Cryst. Solids 103, 73 (1988).CrossRefGoogle Scholar
6.Fayek, S.A., El-Ocker, M., Fouad, S.S., El-Fouly, N.H., and Amin, G.A., J. Phys. D: Appl. Phys. 28, 1 (1995).CrossRefGoogle Scholar
7.El-Samanoudy, M.M. and Fadel, M., J. Mater. Sci. 27, 646 (1992).CrossRefGoogle Scholar
8.Xu, J., Yang, I., Chen, Q., Jiang, W., Ye, H., Mahadevan, S., Gridhar, A., and Singh, A.K., J. Non-Cryst. Solids 184, 302 (1993).Google Scholar
9.El-Ocker, M.M., Bayony, T., Metawe, F., Fayke, S.A., and Hassanien, A.S., Al-Azhar Bull. Sci. 6, 1357 (1995).Google Scholar
10.El-Ocker, M.M., Fayke, S.A., and Hassanien, A.S., Areaca/Int. Rep. 216 (1997).Google Scholar
11.Fayke, S.A., El-Ocker, M.M., and Hassanien, A.S., Indian J. Phys. A 72(1) (1998).Google Scholar
12.Bicerano, J., Oushinsky, S.R., Mahadevan, S., Gridhar, A., and Singh, A.K., J. Non-Cryst. Solids 74, 75 (1985).Google Scholar
13.Tolansky, , in Multiple beam interferometry surfaces and films, (Oxford University, London and New York, 1984), p. 147.Google Scholar
14.El-Whab, LA., Fayek, S.A., and Ashoor, A., Arab J. 32(1) (1999).Google Scholar
15.Mott, N.F., Davis, E.A., and Street, R.A., Philips Mag. 32, 96 (1975).Google Scholar
16.Kastner, M., Adler, D., and Fritzsche, H., Phys. Rev. Lett. 37, 1504 (1976).Google Scholar
17.Demichelis, F., Kanidakis, G., Tagliferro, A., and Tresso, E., Appl. Opt. 9, 26, 1737 (1987).CrossRefGoogle Scholar
18.Urbach, F., Phy. Rev. 92, 1324 (1953).Google Scholar
19.Pauling, L., in The Nature of the Chemical Bond, 3rd ed. (Cornell University Press, Ithaca, NY, 1960).Google Scholar
20.Davis, E.A. and Mott, N.F., Philos. Mag. 22, 903 (1970).Google Scholar
21.Tauc, J., Grigorovici, R., and Vancu, A., Phys. Statos. 15, 627 (1966).Google Scholar
22.Allred, A.L., J. Inorg. Nucl. Chem. 1, 215 (1961).CrossRefGoogle Scholar
23.Saffarini, G. and Schlieper, A., Appl. Phys. A 61 (1995).Google Scholar