Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-30T22:21:05.819Z Has data issue: false hasContentIssue false
  • English
  • Français

Patterning of dielectric oxide thin layers by microcontact printing of self-assembled monolayers

Published online by Cambridge University Press:  03 March 2011

N.L. Jeon ,
P.G. Clem ,
R.G. Nuzzo  and
D.A. Payne
N.L. Jeon
Affiliation:
Department of Materials Science and Engineering, Univers ity of Illinois at Urbana-Champaign, Urbana, Illinois 61801
P.G. Clem
Affiliation:
Department of Materials Science and Engineering, Fredrick Seitz Materials Research Laboratory, and Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
R.G. Nuzzo*
Affiliation:
School of Chemical Sciences, Fredrick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
D.A. Payne*
Affiliation:
Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, and Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
*
a)Author to whom correspondence should be addressed.
a)Author to whom correspondence should be addressed.
Get access

Abstract

This communication describes a technique used to pattern oxide thin layers using microcontact printing (μCP) and sol-gel deposition. The technique involves μCP of self-assembled monolayers (SAM's) of alkylsiloxane on various substrates (SiO2/Si, sapphire, ITO, and glass), followed by deposition of oxide thin layers from sol-gel precursors. Delamination of oxide layers from SAM-derivatized regions allows selective deposition of crystalline dielectric oxide layers on underivatized regions. To demonstrate the viability of this technique for integrated microelectronics and optics applications, patterned (Pb,La)TiO3 (PLT) and LiNbO3 layers were deposited on sapphire, silicon, and indium tin oxide (ITO) substrates. Use of lattice-matched substrates allows lithography-free deposition of patterned heteroepitaxial oxide layers. Strip waveguides of heteroepitaxial LiNbO3 with 4 μm lateral dimensions were fabricated on sapphire. Dielectric measurements for patterned PLT thin layers on ITO are also reported.

Type
Rapid Communication
Information
Journal of Materials Research , Volume 10 , Issue 12 , December 1995 , pp. 2996 - 2999
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Kumar, A. and Whitesides, G.M., Appl. Phys. Lett. 63, 2002 (1993).Google Scholar
2Kumar, A., Biebuyck, H., and Whitesides, G.M., Langmuir 10, 1498 (1994).CrossRefGoogle Scholar
3Wilbur, J., Kumar, A., Kim, E., and Whitesides, G.M., Adv. Mat. 6, 600 (1994).CrossRefGoogle Scholar
4Xia, Y., Mrksich, M., and Whitesides, G.M., unpublished.Google Scholar
5Jeon, N.L., Nuzzo, R.G., Xia, Y., Mrksich, M., and Whitesides, G.M., Langmuir 11, 3024 (1995).Google Scholar
6Jackel, J., Rice, C., and Veselka, J., Appl. Phys. Lett. 41, 607 (1982).CrossRefGoogle Scholar
7Eichorst, D.J., Payne, D.A., Wilson, S.R., and Howard, K.E., Inorg. Chem. 29, 1458 (1990).CrossRefGoogle Scholar
8Clem, P.G. and Payne, D.A., in Ferroelectric Thin Films IV, edited by Desu, S.B., Tuttle, B.A., Ramesh, R., and Shiosaki, T. (Mater. Res. Symp. Proc. 361, Pittsburgh, PA, 1995).Google Scholar
9Ali, N.J., Clem, P.G., and Milne, S.J., J. Mater. Sci. Lett. 14, 837 (1995).CrossRefGoogle Scholar
10The Si substrates used were p-type, (100) orientation, with 20–25 A native oxide.Google Scholar
11Lee, J.J., Alluri, P., and Dey, S.K., Appl. Phys. Lett. 65, 2027 (1994).CrossRefGoogle Scholar