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Phase stability of heteroepitaxial polydomain BaTiO3 thin films

Published online by Cambridge University Press:  18 July 2011

A.L. Meier ,
A.Y. Desai ,
L. Wang ,
T.J. Marks  and
B.W. Wessels
A.L. Meier
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
A.Y. Desai
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208; and Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
L. Wang
Affiliation:
Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208
T.J. Marks
Affiliation:
Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208
B.W. Wessels*
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208; and Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208
*
a) Address all correspondence to this author. e-mail: b-wessels@northwestern.edu
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Abstract

The phase stability of ferroelectric, epitaxial, polydomain BaTiO3 thin films was examined using temperature-dependent x-ray diffraction (XRD) and in-plane electronic polarization measurements. The epitaxial BaTiO3 thin films were grown on MgO(100) substrates by a metal-organic chemical vapor deposition process. As-deposited and annealed BaTiO3 thin films with different domain structures were examined. Temperature-dependent plane-normal XRD analysis reveals well-defined phase transitions at 140 and 169 °C in the c- and a-oriented films, respectively. The measured Curie temperatures are consistent with those predicted by Landau-Ginsburg-Devonshire theory as applied to polydomain BaTiO3 thin films. Temperature-dependent in-plane electronic polarization measurements confirm that the 140 °C Curie temperature observed in the c-oriented film is a well-defined second-order paraelectric-ferroelectric transition.

Keywords

EpitaxyFerroelectricPhase transformation
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 5 , May 2007 , pp. 1384 - 1389
Copyright
Copyright © Materials Research Society 2007

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References

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