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Photochemical vapor deposition of silicon oxynitride films by deuterium lamp

Published online by Cambridge University Press:  31 January 2011

Junji Watanabe  and
Mitsugu Hanabusa
Junji Watanabe
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tenpaku, Toyohashi 440, Japan
Mitsugu Hanabusa
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tenpaku, Toyohashi 440, Japan
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Abstract

Silicon oxynitride films have been grown by a photochemical vapor deposition process utilizing VUV light of a deuterium lamp from a gas mixture of Si2H6, NH3, and NO2 at the substrate temperature of about 330 °C. The deposition rate of the film varied with NO2 flow rate and also with the excitation light spectrum which was varied by a low-pass filter of a synthetic or fused silica plate. The composition of the films was sensitive to the NO2 flow rate which was smaller than that of NH3 by a factor of 103.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 4 , August 1989 , pp. 882 - 885
Copyright
Copyright © Materials Research Society 1989

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References

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