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Photoluminescence spectra of undoped and Sm3+-doped BaAl2S4 and BaAl2Se4 single crystals

Published online by Cambridge University Press:  31 January 2011

Moon-Seog Jin ,
Choong-Il Lee ,
Chang-Sun Yoon ,
Chang-Dae Kim ,
Jae-Mo Goh  and
Wha-Tek Kim
Moon-Seog Jin
Affiliation:
Department of Physics, Dongshin University, Naju 520-714, Republic of Korea
Choong-Il Lee
Affiliation:
Department of Physics, Suncheon National University, Suncheon 540-742, Republic of Korea
Chang-Sun Yoon
Affiliation:
Department of Physics, Kunsan National University, Kunsan 573-800, Republic of Korea
Chang-Dae Kim
Affiliation:
Department of Physics, Mokpo National University, Mokpo 534-729, Republic of Korea
Jae-Mo Goh
Affiliation:
Department of Physics, Chonnam National University, and Kwangju Branch, Korea Basic Science Institute, Kwangju 500-757, Republic of Korea
Wha-Tek Kim
Affiliation:
Department of Physics, Chonnam National University, and Kwangju Branch, Korea Basic Science Institute, Kwangju 500-757, Republic of Korea
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Abstract

Undoped and Sm3+-doped BaAl2S4 and BaAl2Se4 single crystals were grown by the chemical transport reaction method. The optical energy band gaps of the BaAl2S4 and BaAl2Se4 were found to be 4.10 and 3.47 eV, respectively, at 5 K. In their photoluminescence spectra measured at 5 K, broad emission peaks at 459 and 601 nm appeared in the BaAl2S4 and at 486 and 652 nm in the BaAl2Se4. These emissions are assigned to donor–acceptor pair recombinations. Sharp emission peaks were observed in the Sm3+-doped BaAl2S4 and BaAl2Se4 single crystals at 5 K. Taking into account the ionic radii of the cations and Sm3+, these sharp emission peaks are attributed to the electron transitions between the energy levels of Sm3+ substituting with the Ba site.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 5 , May 2001 , pp. 1520 - 1524
Copyright
Copyright © Materials Research Society 2001

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References

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