Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-30T19:52:44.476Z Has data issue: false hasContentIssue false
  • English
  • Français

Polycrystalline hexagonal boron nitride films on SiO2 for III–V semiconductor applications

Published online by Cambridge University Press:  31 January 2011

J. L. Hurd ,
D. L. Perry ,
B. T. Lee ,
K. M. Yu ,
E. D. Bourret  and
E. E. Haller
J. L. Hurd
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
D. L. Perry
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
B. T. Lee
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
K. M. Yu
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
E. D. Bourret
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
E. E. Haller
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
Get access

Abstract

Isotropic hexagonal BN (h-BN) films were deposited on SiO2 crucibles used for synthesis of GaAs. Deposited films were analyzed for composition, morphology, and growth rates using proton resonant scattering, optical absorption, x-ray and electron diffraction, and transmission electron microscopy. The silicon concentration of GaAs synthesized in BN coated crucibles was approximately one order of magnitude higher than that for GaAs synthesized in uncoated crucibles under identical synthesis conditions.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 2 , April 1989 , pp. 350 - 354
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Cochran, C.N. and Foster, L. M., J. Electrochem. Soc. 109, 149 (1962).CrossRefGoogle Scholar
2Shimoda, T. and Akai, S. J., Jap. J. Appl. Phys. 8, 1352 (1969).Google Scholar
3Blanc, J. and Weisberg, L. R., Nature 192, 155 (1961).CrossRefGoogle Scholar
4Hurd, J. L., “Investigation of Crucible Materials in Gradient Freeze Gallium Arsenide Crystal Growth,” M.S. Thesis, University of California, Berkeley, 67 (1987).Google Scholar
5Abernathy, C. R., Kinsella, A. P., Jordan, A. S., Caruso, R., Pearton, S. J., Temkin, H., and Wade, H., J. Cryst. Growth 85, 106 (1987).CrossRefGoogle Scholar
6Parsey, J. M., Ph.D. Thesis, Department of Materials Science, MIT, Cambridge, MA (1982).Google Scholar
7Yemenidjian, N. and Lombos, B. A., J. Cryst. Growth 56, 163 (1982).Google Scholar
8Gault, W. A., Monberg, E.M., and Clemens, J. E., J. Cryst. Growth 74, 491 (1986).CrossRefGoogle Scholar
9Khan, A.A., Boss, M., Alterovitz, S.A., Haugland, E. J., Allred, W. P., and Burke, K.M., Semi-insulating M-V Materials (Hakone, 1986), p. 71.Google Scholar
10Kobayashi, T., Lagowski, J., and Gatos, H. C., Proc. of 5th Conf. on III-V Materials (Malmo, Sweden, June 1-3, 1988).Google Scholar
11Motojima, S., Tamura, Y., and Sugiyama, K., Thin Solid Films 88, 269 (1982).Google Scholar
12Sano, M. and Aoki, M., Thin Solid Films 83, 247 (1981).Google Scholar
13Yu, K. M., Jaklevic, J. M., and Haller, E. E., Nucl. Instrum. Methods B30, 551 (1988).Google Scholar
14Feder, R. and Berry, B. S., J. Appl. Cryst. 3, 372 (1970).Google Scholar
15Landolt-Bornstein, , Numerical Data and Functional Relationships in Science and Technology, edited by Madelung, O. (Springer-Verlag, New York, 1982), Group III, Vol. 17a.Google Scholar
16Zunger, A., Katzin, A., and Halperin, A., Phys. Rev. B 13, 5560 (1976).Google Scholar
17Scherrer, P., Gottingen Nachrichten 2, 98 (1918).Google Scholar
18Clark, G., Encyclopedia of X-rays and Gamma Rays (Reinhold, 1963), p. 184.Google Scholar
19Powder Diffraction File, edited by Smith, J. V., Berry, L. G., and Post, B. (Joint Committee on Chemical Analysis by Powder Diffraction Methods, ASTM, Philadelphia, PA, 1967), card 9-12.Google Scholar
20Kobayashi, T., Lagowski, J., and Gatos, H. C., Proc. of the 5th Conf. on Semi-insulating III-V Materials (Malmo, Sweden, June 1-3, 1988), edited by Grossmann, G. and Ledebo, L. (Institute of Physics Publishing, Ltd.).Google Scholar