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Preparation of Cu(In,Ga)Se2 thin films at low substrate temperatures

Published online by Cambridge University Press:  31 January 2011

S. Nishiwaki ,
T. Satoh ,
Y. Hashimoto ,
T. Negami  and
T. Wada
S. Nishiwaki
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619–0237, Japan
T. Satoh
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619–0237, Japan
Y. Hashimoto
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619–0237, Japan
T. Negami
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619–0237, Japan
T. Wada
Affiliation:
Department of Materials Chemistry, Ryukoku University, Seta, Otsu 520-2194, Japan
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Abstract

Cu(In,Ga)Se2(CIGS) thin films were prepared at substrate temperatures of 350 to 500 °C. The (In,Ga)2Se2 precursor layers were deposited on Mo coated soda-lime glass and then exposed to Cu and Se fluxes to form CIGS films. The surface composition was probed by a real-time composition monitoring method. The CIGS films were characterized by x-ray diffraction, energy dispersive x-ray spectroscopy, secondary ion mass spectroscopy, and atomic force microscopy. The transient formation of a Cu–Se phase with a high thermal emissivity was observed during the deposition of Cu and Se at a substrate temperature of 350 °C. Faster diffusion of In than Ga from the (In,Ga)2Se3 precursor to the newly formed CIGS layer was observed. A growth model for CIGS films during the deposition of Cu and Se onto (In,Ga)2Se3 precursor is proposed. A solar cell using a CIGS film prepared at about 350 °C showed an efficiency of 12.4%.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 2 , February 2001 , pp. 394 - 399
Copyright
Copyright © Materials Research Society 2001

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References

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