Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-28T06:33:50.455Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of Molybdenum-doped Indium Oxide Thin Films Using Reactive Direct-current Magnetron Sputtering

Published online by Cambridge University Press:  01 June 2005

Xifeng Li ,
Weina Miao ,
Qun Zhang ,
Li Huang ,
Zhuangjian Zhang  and
Zhongyi Hua
Xifeng Li
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
Weina Miao
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
Qun Zhang*
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
Li Huang
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
Zhuangjian Zhang
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
Zhongyi Hua
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
*
a) Address all correspondence to this author. e-mail: zhangqun@fudan.edu.cn
Get access

Abstract

High-mobility molybdenum-doped In2O3 films (IMO) were prepared on the normal glass substrate by reactive direct current magnetron sputtering from the molybdenum-embedded indium metal target. The effects of oxygen partial pressure, substrate temperature, and sputtering current on the optoelectrical properties of IMO films were investigated. The films with the highest carrier mobility of 50 cm2 V−1 s−1, as well as the average visible transmission greater than 80% including the 1.2-mm-thick glass substrate, were obtained. The minimum resistivity of the films is 3.7 × 10−4 ohm cm. The properties of the IMO films are sensitive to the oxygen partial pressure in the sputtering environment. X-ray diffraction measurements indicate that the films show In2O3 crystal structure.

Keywords

Electrical propertiesSputteringTransparent conductor
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 6 , June 2005 , pp. 1404 - 1408
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Gordon, R.G.: Criteria for choosing transparent conductors. MRS Bull. 25(8), 52 (2000).Google Scholar
2Ginley, D.S. and Bright, C.: Transparent conducting oxides. MRS Bull. 25(8), 15 (2000).CrossRefGoogle Scholar
3Bellingham, J.R., Phillips, W.A. and Adkins, C.J.: Intrinsic performance limits in transparent conducting oxides. J. Mater. Sci. Let. 11, 263 (1992).CrossRefGoogle Scholar
4Hamberg, I. and Granqvist, C.G.: Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy-efficient windows. J. Appl. Phys. 60, R123 (1986).Google Scholar
5Coutts, T.J., Young, D.L. and Li, X.: Characterization of transparent conducting oxides. MRS Bull. 25(8), 58 (2000).CrossRefGoogle Scholar
6Meng, Y., Yang, X.L., Chen, H.X., Shen, J., Jiang, Y.M., Zhang, Z.J. and Hua, Z.Y.: New transparent conductive thin film In2O3:Mo. Thin Solid Films 394, 218 (2001).CrossRefGoogle Scholar
7Meng, Y., Yang, X.L., Chen, H.X., Shen, J., Jiang, Y.M., Zhang, Z.J. and Hua, Z.Y.: Molybdenum-doped indium oxide transparent conductive thin films. J. Vac. Sci. Technol. A 20, 288 (2002).CrossRefGoogle Scholar
8Meng, Y., Zhang, Z.J. and Hua, Z.Y.: Study on carrier mobility of transparent conductive IMO films. Vac. Sci. Technol. 22, 265 2002, (in Chinese).Google Scholar
9Meng, Y., Yang, X.L., Chen, H.X., Shen, J., Jiang, Y.M. and Zhang, Z.J.: Transparent conductive oxide doped thin films with high valence difference between dopant and ion substituted. Optoelectron. Technol. 21, 17 2001, (in Chinese).Google Scholar
10Granqvist, C.G. and Hultåke, A.: Transparent and conducting ITO films: New developments and applications. Thin Solid Films 411, 1 (2002).CrossRefGoogle Scholar
11Yoshidaa, Y., Gessert, T.A., Perkins, C.L. and Coutts, T.J.: Development of radio-frequency magnetron sputtered indium molybdenum oxide. J. Vac. Sci. Technol. A 21, 1092 (2003).Google Scholar
12Yoshida, Y., Wood, D.M., Gessert, T.A. and Coutts, T.J.: High-mobility, sputtered films of indium oxide doped with molybdenum. Appl. Phys. Lett. 84, 2097 (2004).CrossRefGoogle Scholar
13Ginley, D., Roy, B., Ode, A., Warmsingh, C., Yoshida, Y., Parilla, P., Teplin, C., Kaydanova, T., Miedaner, A., Curtis, C., Martinson, A., Coutts, T., Teadey, D., Hosono, H. and Perkins, J.: Non-vacuum and PLD growth of next generation TCO materials. Thin Solid Films 445, 193 (2003).Google Scholar
14Warmsingh, C., Yoshida, Y., Readey, D.W., Teplin, C.W., Perkins, J.D., Parilla, P.A., Gedvilas, L.M., Keyes, B.M. and Ginley, D.S.: High-mobility transparent conducting Mo-doped In2O3 thin films by pulsed laser deposition. J. Appl. Phys. 95, 3831 (2004).CrossRefGoogle Scholar
15Sun, S-Y., Huang, J-L. and Lii, D-F.: Effects of oxygen contents on the electrical and optical properties of indium molybdenum oxide films fabricated by high density plasma evaporation. J. Vac. Sci. Technol. A 22, 1235 (2004).Google Scholar
16Wager, J.F.: Transparent electronics. Science 300, 1245 (2003).Google Scholar
17Nomura, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M. and Hosono, H.: Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor. Science 300, 1269 (2003).Google Scholar
18Tahar, R.B.H., Ban, T., Ohya, Y. and Salehi, A.: Annealing effects on opto-electronic properties of sputtered and thermally evaporated indium-tin-oxide films. Thin Solid Films 312, 268 (1998).Google Scholar
19Chen, M., Pei, Z.L., Wang, X., Yu, Y.H., Liu, X.H., Sun, C. and Wen, L.S.: Intrinsic limit of electrical properties of transparent conductive oxide films. J. Phys. D: Appl. Phys. 33, 2538 (2000).CrossRefGoogle Scholar
20Vink, T.J., Walravae, W., Daams, J.F.C., Baarslag, P.C. and Meerakker, J.E.A.M.: On the homogeneity of sputter-deposited ITO films. Part I: Stress and microstructure. Thin Solid Films 266, 145 (1995).Google Scholar
21Kulkarni, A.K., Schulz, K.H., Lim, T.S. and Khan, M.: Dependence of the sheet resistance of indium-tin-oxide thin films on grain size and grain orientation determined from x-ray diffraction techniques. Thin Solid Films 345, 273 (1999).CrossRefGoogle Scholar