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Preparation of Molybdenum-doped Indium Oxide Thin Films Using Reactive Direct-current Magnetron Sputtering

Published online by Cambridge University Press:  01 June 2005

Xifeng Li
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
Weina Miao
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
Qun Zhang*
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
Li Huang
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
Zhuangjian Zhang
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
Zhongyi Hua
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
*
a) Address all correspondence to this author. e-mail: zhangqun@fudan.edu.cn
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Abstract

High-mobility molybdenum-doped In2O3 films (IMO) were prepared on the normal glass substrate by reactive direct current magnetron sputtering from the molybdenum-embedded indium metal target. The effects of oxygen partial pressure, substrate temperature, and sputtering current on the optoelectrical properties of IMO films were investigated. The films with the highest carrier mobility of 50 cm2 V−1 s−1, as well as the average visible transmission greater than 80% including the 1.2-mm-thick glass substrate, were obtained. The minimum resistivity of the films is 3.7 × 10−4 ohm cm. The properties of the IMO films are sensitive to the oxygen partial pressure in the sputtering environment. X-ray diffraction measurements indicate that the films show In2O3 crystal structure.

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Articles
Copyright
Copyright © Materials Research Society 2005

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References

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