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Preparation of SiO2-pillared layered titanate thin films

Published online by Cambridge University Press:  31 January 2011

Takeshi Sumida ,
Ryu Abe ,
Michikazu Hara ,
Junko N. Kondo  and
Kazunari Domen
Takeshi Sumida
Affiliation:
Chemical Resources Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan
Ryu Abe
Affiliation:
Chemical Resources Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan
Michikazu Hara
Affiliation:
Chemical Resources Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan
Junko N. Kondo
Affiliation:
Chemical Resources Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan
Kazunari Domen*
Affiliation:
Chemical Resources Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan
*
a)Address correspondence to this author.kdomen@res.titech.ac.jp
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Abstract

The interlayer space of a thin film of layered titanate, Cs0.68Ti1.83‪0.17O4, was successfully expanded by SiO2 pillaring. Ion exchange of the Cs ions in the interlayer to alkylammoniuim cations, n-CnH2n+1NH3+ (n = 8, 12, 18), expanded the interlayer space, and enabled intercalation of tetraethylorthosilicate. X-ray diffraction and the cross section of transmission electron microscopy images revealed that tetraethylorthosilicate-treated thin film maintained the expansion of interlayer space by SiO2 pillaring after calcination at 773 K. X-ray photoelectron spectroscopy after etching the thin film about 100 nm from the surface further confirmed the existence of SiO2 in the interlayer space.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 15 , Issue 12 , December 2000 , pp. 2587 - 2590
Copyright
Copyright © Materials Research Society 2000

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References

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