Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-30T19:13:06.011Z Has data issue: false hasContentIssue false

Pulsed-laser induced transient phase transformations at the Si–H2O interface

Published online by Cambridge University Press:  31 January 2011

A. Polman
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
W. C. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
M. J. Uttormark
Affiliation:
Department of Materials Science, Cornell University, Ithaca, New York 14853
Michael O. Thompson
Affiliation:
Department of Materials Science, Cornell University, Ithaca, New York 14853
Get access

Abstract

Phase transformations at the Si–H2O interface, induced by nanosecond pulsed laser irradiation, were studied in real time. Si samples were irradiated using a 4 ns pulse from a Q-switched frequency-doubled Nd:YAG laser while immersed in the transparent liquid. Using time-resolved conductivity and reflectivity techniques, in combination with modeling of optical parameters and heat flow, transient processes in the Si, the H2O, and at the interface have been unraveled. In the liquid, local rapid heating occurs as a result of heat flow across the interface, and formation of a low-density steam phase occurs on a nanosecond timescale. Expansion of this phase is followed by a collapse after 200 ns. These rapid phase transformations in the water initiate a shock wave with a pressure of 0.4± 0.3 kbar. Transient phase transformations and the heat flow into the water during the laser pulse influence the energy coupling into the sample, resulting in an effective laser pulse shortening. The pulse shortening and the additional heat flow into the water during solidification result in a 30% enhancement of the solidification velocity for 270 nm deep melts. Cross-section transmission electron microscopy data reveal that the Si surface is planar after irradiation and is inert to chemical reactions during irradiation. Recent experiments described in the literature concerning pulsed-laser induced synthesis at the solid-liquid interface are reviewed and discussed in the context of the fundamental phenomena presently observed.

Type
Articles
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Laser Annealing of Semiconductors, edited by Poate, J.M. and Mayer, J.W. (Academic, New York, 1982).Google Scholar
2Lowndes, D.H., Pennycook, S. J., Jellison, G. E. Jr , Withrowand, S.P.Mashburn, D.N., J. Mater. Res. 2, 648 (1987).CrossRefGoogle Scholar
3Wood, R. F. and Geist, G. A., Phys. Rev. B 34, 2606 (1986).Google Scholar
4Thompson, M. O. and Peercy, P. S., in Beam-Solid Interactions and Phase Transformations, edited by Kurz, H., Olson, G.L., and Poate, J.M. (MRS Symp. Proc., MRS, Pittsburgh, PA, 1986), p. 99.Google Scholar
5Thompson, M. O. and Peercy, P. S., in Beam-Solid Interactions and Transient Processes, edited by Thompson, M. O., Picraux, S.T., and Williams, J.S. (MRS Symp. Proc, MRS, Pittsburgh, PA, 1987) Vol. 74, p. 15.Google Scholar
6Aziz, M.J., Tsao, J. Y., Thompson, M. O., Peercy, P. S., and White, C.W., Phys. Rev. Lett. 56, 2489 (1986).Google Scholar
7Aziz, M.J. and White, C.W., Phys. Rev. Lett. 57, 2675 (1986).Google Scholar
8Campisano, S. U., Jacobson, D. C., Poate, J. M., Cullis, A. G., and Chew, N. G., Appl. Phys. Lett. 46, 846 (1985).CrossRefGoogle Scholar
9Peercy, P. S., Thompson, M. O., and Tsao, J. Y., Appl. Phys. Lett. 47 244 (1985).Google Scholar
10Peercy, P. S., Thompson, M. O., Tsao, J. Y., and Poate, J. M., see Ref. 4, p. 125.Google Scholar
10Bruines, J. J. P., Hal, R. P. M. van, Boots, H. M. J., Sinke, W., and Saris, F.W., Appl. Phys. Lett. 48, 1252 (1986).CrossRefGoogle Scholar
12Bruines, J.J.P., M, R.P.. Hal, van, Boots, H.M.J., Polman, A., and Saris, F.W., Appl. Phys. Lett. 49, 1160 (1986).Google Scholar
13Lowndes, D.H., Jellison, G.E., Jr., Pennycook, S.J., Withrowand, S.P.Mashburn, D.N., Appl. Phys. Lett. 48, 1389 (1986).Google Scholar
14Sinke, W. and Saris, F.W., Phys. Rev. Lett. 53, 2121 (1984).CrossRefGoogle Scholar
15Narayan, J. and White, C.W., Appl. Phys. Lett. 44, 35 (1984).Google Scholar
16Richards, P. M., Phys. Rev. B 38, 2727 (1988).Google Scholar
17Tsao, J.Y., Aziz, M.J., Thompson, M. O., and Peercy, P. S., Phys. Rev. Lett. 56, 2712 (1986).Google Scholar
18Tsao, J. Y. and Peercy, P. S., Phys. Rev. Lett. 58, 2782 (1987).CrossRefGoogle Scholar
19Jellison, G.E. Jr , Lowndes, D.H., Mashburn, D.N., and Wood, R. F., Phys. Rev. B 34, 2407 (1986).CrossRefGoogle Scholar
20Stiffler, S.R. and Thompson, M.O., Phys. Rev. Lett. 60, 2519 (1988).Google Scholar
21Wood, R. F. and Giles, G. E., Phys. Rev. B 23, 2923 (1981).Google Scholar
22Wood, R.F. and Giles, G.E., Phys. Rev. Lett. 57, 873 (1986).Google Scholar
23Berti, M., Rose, L. F. Doná dalle, Drigo, A. V., Cohen, C., Siejka, J., Bentini, G. G., and Jannitti, E., Phys. Rev. B 34, 2346 (1986).Google Scholar
24Cohen, C., Siejka, J., Berti, M., Drigo, A. V., Bentini, G.G., Pribatand, D.Jannitti, E., J. Appl. Phys. 55, 4081 (1984).Google Scholar
25Hoh, K., Koyama, H., Uda, K., and Miura, Y., Jpn. J. Appl. Phys. 19, 375 (1980).Google Scholar
26Liu, Y. S., Chiang, S.W., and Bacon, F., Appl. Phys. Lett. 38, 1005 (1981).Google Scholar
27Turner, G. B., Tarrant, D., Pollock, G., Pressley, R., and Press, R., Appl. Phys. Lett. 39, 967 (1981).CrossRefGoogle Scholar
28Bentini, G. G., Biaconi, M., Correra, L., Nipoti, R., Summonte, C., Cohen, C., and Siejka, J., in Photon, Beam and Plasma Enhanced Processing, edited by Golanski, A., Nguyen, V. T., and Krimmel, E. F. (E-MRS Symp. Proc. XV), (Les Editions de Physique, Les Ulis, France, 1987), p. 273.Google Scholar
29Deutsch, T. F., Fan, J. C. C., Turner, G.W., Chapman, R. L., Ehrlich, D.J., and Osgood, R. M. Jr , Appl. Phys. Lett. 38, 144 (1981).CrossRefGoogle Scholar
30Nakamura, K., Hikita, M., Asano, H., and Terada, A., Jpn. J. Appl. Phys. 21, 672 (1982).Google Scholar
31Ogale, S.B., Polman, A., F.Quentin, O. P., Roorda, S., and Saris, F.W., Appl. Phys. Lett. 50, 138 (1987).Google Scholar
32Stuck, R., Fogarassy, E., Muller, J. C., Hodeau, M., Wattiaux, A., and Siffert, P., Appl. Phys. Lett. 38, 715 (1981).CrossRefGoogle Scholar
33Roorda, S., Polman, A., Ogale, S.B., and Saris, F.W., in Photon, Beam and Plasma Stimulated Chemical Processes at Surfaces, edited by Donnelly, V. M., Herman, I. P., and Hirose, M. (MRS Symp. Proc MRS, Pittsburgh, PA, 1987), Vol. 75, p. 297.Google Scholar
34Patil, P. P., Phase, D. M., Kulkarni, S. A., Ghaisas, S. V., Kulkarni, S. K., Kanetkar, S.M., Ogale, S.B., and Bhide, V. G., Phys. Rev. Lett. 58 238 (1987).Google Scholar
35Ogale, S. B., Patil, P. P., Phase, D. M., Bhandarkar, Y. V., Kulkarni, S. K., Kulkarni, S., Ghaisas, S. V., Kanetkar, S. M., Bhide, V. G., and Guha, S.Phys. Rev. B 36, 8237 (1987).Google Scholar
36Ghaisas, S.V., Malshe, A. P., Patil, P.P., Kanetkar, S.M., Ogaleand, S.B.Bhide, V.G., J. Appl. Phys. 62, 2799 (1987).Google Scholar
37Ogale, S.B., Patil, P.P., Roorda, S., and Saris, F.W., Appl. Phys. Lett. 50, 1802 (1987).CrossRefGoogle Scholar
38Chan, S-W., Dijkkamp, D., Wu, X. D., Venkatesan, T., and Changsee, C. C. Ref. 33, p. 287.Google Scholar
39Dijkkamp, D., Wu, X.D., Chan, S-W., and Venkatesan, T., see Ref. 33, p. 303.Google Scholar
40Ursu, I., Mihailescu, I.N., Nanu, L., Nistor, L.C., Popescu, M., Teodorescu, V.S., Prokhorov, A.M., Konov, V.I., Uglov, S.A., and Ralchenko, V.G., J. Phys. D: Appl. Phys. 19, 1183 (1986).Google Scholar
41Polman, A., Sinke, W., Saris, F. W., Uttormark, M. J., and Thompson, M. O., Appl. Phys. Lett. 52, 535 (1988).Google Scholar
42Liu, P. L., Yen, R., Bloembergen, N., and Hodgson, R. T., Appl. Phys. Lett. 34, 864 (1979).Google Scholar
43Campisano, S. U., Jacobson, D. C., Poate, J. M., Cullis, A. G., and Chew, N. G., Appl. Phys. Lett. 45, 1216 (1984).CrossRefGoogle Scholar
44Galvin, G.J., Thompson, M.O., Mayer, J.W., Peercy, P. S., Hammond, R. B., and Paulter, N., Phys. Rev. B 27, 1079 (1983).CrossRefGoogle Scholar
45Liquid Semiconductors, edited by Glazov, V. M., Chizhevskayaand, S.N.Glagoleva, N. N. (Plenum, New York, 1969).CrossRefGoogle Scholar
46Cullis, A. G., Webber, H. C., and Bailey, P., J. Phys. E: Sci. Instrum. 12, 688 (1979).Google Scholar
47Auston, D.H., Surko, C.M., Venkatesan, T. N. C., Slusher, R.E., and Golovochenko, J. A., Appl. Phys. Lett. 33, 437 (1978).CrossRefGoogle Scholar
48Thompson, M. O., “Liquid-Solid Interface Dynamics During Pulsed Laser Melting of Silicon-On-Sapphire,” Ph.D. Thesis (Cornell University, Ithaca, NY, 1984).Google Scholar
49CRC Handbook of Chemistry and Physics (Chemical Rubber Company, Boca Raton, FL, 1981).Google Scholar
50Thompson, M. O., Bucksbaum, P. H., and Bokor, J., in Energy-Beam Solid Interactions and Transient Thermal Processing, edited by Biegelsen, D.K., Rozgonyi, G. A., and Shank, C.V. (MRS Symp. Proc MRS, Pittsburgh, PA, 1985), Vol. 35, p. 181.Google Scholar
51Tsao, J. Y., Aziz, M.J., Peercy, P. S., and Thompson, M.O., in Fundamentals of Beam-Solid Interactions and Transient Thermal Processing, edited by Aziz, M.J., Rehn, L.E., and Stritzker, B. (MRS Symp. Proc, MRS, Pittsburgh, PA, 1988), Vol. 100, p. 519.Google Scholar
52Tsao, J.Y., Aziz, M.J., Thompson, M.O., and Peercy, P. S., Phys. Rev. Lett. 56, 2712 (1986).Google Scholar
53Azzam, R. M. A. and Bashara, N. M., Ellipsometry and Polarized Light (North-Holland, Amsterdam, 1987).Google Scholar
54Wood, R. F., White, C. W., and Young, R. T., in Semiconductors and Semimetals, Vol. 23, Pulsed Laser Processing of Semiconductors (Academic, New York, 1984).Google Scholar
55Born, M. and Wolf, E., Principles of Optics (Pergamon, New York, 1968).Google Scholar
56Landolt-Börnstein, , Eigenschaften der Materie in ihren Aggregatzuständen, 8. Teil (Springer, Berlin, 1962).Google Scholar
57Walsh, J.M. and Rice, M.H., J. Chem. Phys. 26, 815 (1957).Google Scholar
58Clemmov, P. C. and Dougherly, J. P., Electrodynamics of Particles and Plasmas (Addison-Wesley, Reading, MA, 1969).Google Scholar
59Polman, A., Roorda, S., Ogale, S.B., and Saris, F.W., see Ref. 5, p. 129.Google Scholar
60Brueck, S.R.J. and Kildal, H., J. Appl. Phys. 52, 1004 (1981).CrossRefGoogle Scholar
61Hill, G. A., James, D. J., and Ramsden, S. A., J. Phys. D: Appl. Phys. 5, 155 (1972).Google Scholar
62Bloembergen, N., IEEE J. Quantum Electron. QE-10, 375 (1974).Google Scholar
63Felix, M.P. and Ellis, A. T., Appl. Phys. Lett. 19, 484 (1971).Google Scholar
64Letokhov, V. S., Laser Photoionization Spectroscopy (Academic, Orlando, 1987).Google Scholar
65Krasucki, Z., Proc. R. Soc. London. Ser. A 294, 393 (1966).Google Scholar
66Schoeffmann, H., Schmidt-Kloiber, H., and Reichel, E., J. Appl. Phys. 63, 46 (1988).Google Scholar
67Emmony, D. C., Siegrist, M., and Kneubuhl, F. K., Appl. Phys. Lett. 29, 547 (1976).Google Scholar
68Bell, C. E. and Landt, J. A., Appl. Phys. Lett. 10, 46 (1967).Google Scholar
69Bell, C. E. and Maccabee, B. S., Appl. Opt. 13, 605 (1974).CrossRefGoogle Scholar
70Salzmann, D., Gilath, I., and Arad, B., Appl. Phys. Lett. 52, 1128 (1988).CrossRefGoogle Scholar
71Pirri, A. N., Root, R. G., and Wu, P. K. S., AIAA J. 16, 1296 (1978).Google Scholar
72Koren, G., Appl. Phys. Lett. 51, 569 (1987).Google Scholar
73Walkup, R. E., Jasinski, J. N., and Dreyfus, R. W., Appl. Phys. Lett. 48, 1690 (1986).Google Scholar
74Feiock, F.D. and Goodwin, L. K., J. Appl. Phys. 43, 5061 (1972).Google Scholar
75Stiffler, S.R., Thompson, M.O., and Peercy, P. S., Phys. Rev. Lett. 60, 2519 (1988).Google Scholar
76Cros, A., Salvan, F., and Derrien, J., Appl. Phys. A 28, 241 (1982).Google Scholar
77Wang, Z. L., Westendorp, J. F. M., and Saris, F.W., Nucl. Instrum. Methods 211, 193 (1983).Google Scholar
78Berti, M., Drigo, A. V., Bentini, G. G., Cohen, C., Siejka, J., and Jannitti, E., in Energy Beam—Solid Interactions and Transient Thermal Processing, edited by Nguyen, V. T. and Cullis, A. G. (Les Editions de Physique, Les Ulis Cedex, 1985), p. 131.Google Scholar
79Richter, H., Orlowski, T.E., Kelly, M., and Margaritondo, G., J. Appl. Phys. 56, 2351 (1984).CrossRefGoogle Scholar
80Liu, Y. S., Chiang, S-W., and Katz, W., in Laser and Electron-Beam Interactions with Solids, edited by Appleton, B.R. and Keller, G.K. (Elsevier, Amsterdam, 1982).Google Scholar
81Fan, J. C. C., Deutsch, T. F., Turner, G. W., Ehrlich, D. J., Chapman, R. L., and Osgood, R. M., in Proc. 15th IEEE Photovoltaic Specialists Conference (IEEE, New York, 1981), p. 432.Google Scholar
82Deutsch, T. F., Ehrlich, D.J., Rathman, D.D., Silversmith, D.J., and Polman, A.Osgood, R.M. Jr , Appl. Phys. Lett. 39, 825 (1981). et al.: Pulsed-laser induced transient phase transformationsGoogle Scholar
83Turner, G.B., Tarrant, D., Aldrich, D., Pressley, R., and Press, R., in Proc. 4th E. C. Photovoltaic Specialists Conference (Reidel, Dordrecht1982), p. 427.Google Scholar
84Turner, G.B., Tarrant, D., Aldrich, D., Pressley, R., and Press, R., in Proc. 16th IEEE Photovoltaic Specialists Conference (IEEE, New York, 1982), p. 775.Google Scholar
85Carey, P. G., Turner, J. E., Nauka, K., Reid, G. A., and Sigmon, T. W., in Rapid Thermal Processing of Electronic Materials, edited by Wilson, S.R., Powell, R., and Davies, D. E. (MRS Symp. Proc, MRS, Pittsburgh, PA, 1987), Vol. 92, p. 65.Google Scholar
86Bentini, G.G., Bianconi, M., Correra, L., Lotti, R., and Summonte, C., in Proc. 7th E. C. Photovoltaic Solar Energy Conference, edited by Goetzberger, A., Palz, W., and Wileke, G. (Reidel, Dordrecht, 1987), p. 1044.Google Scholar
87Sigmon, T. W., Carey, P. G., Press, R. L., Fahler, T. S., and Pressleyin, R. J. edited by Fan, J.C.C. and Johnson, N.M. (MRS Symp. Proc., MRS, Pittsburgh, PA, 1984), Vol. 23, p. 247.Google Scholar
88Carey, P.G., Sigmon, T.W., Press, R.L., and Fahlen, T.S., IEEE Electron. Dev. Lett. EDL-6, 291 (1985).Google Scholar
89Fogarassy, E., Stuck, R., Grob, J.J., and Siffert, P., J. Appl. Phys. 52, 1076 (1981).Google Scholar
90Fogarassy, E., Stuck, R., Muller, J.C., Hodeau, M., Wattiaux, A., Toulemonde, M., and Siffert, P., in Proc. 3rd E. C. Photovoltaic Solar Energy Conference, edited by Palz, W. (Reidel, Dordrecht, 1981), p. 639.Google Scholar
91Fogarassy, E. P., Lowndes, D.H., Narayan, J., and White, C.W., J. Appl. Phys. 58, 2167 (1985).Google Scholar
92Affolter, K., Liithy, W., and Allmen, M. von, Appl. Phys. Lett. 33, 185 (1978).Google Scholar
93Narayan, J., Young, R.T., Wood, R.F., and Christie, W.H., Appl. Phys. Lett. 33, 338 (1978).Google Scholar
94Sameshima, T., Usui, S., and Sekiya, M., J. Appl. Phys. 62, 711 (1987).Google Scholar