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Pushing the detection limit of thin film magnetoelectric heterostructures

Published online by Cambridge University Press:  22 February 2017

Volker Röbisch
Affiliation:
Institute for Materials Science, Kiel University, Kiel 24143, Germany
Sebastian Salzer
Affiliation:
Institute of Electrical and Information Engineering, Kiel University, Kiel 24143, Germany
Necdet O. Urs
Affiliation:
Institute for Materials Science, Kiel University, Kiel 24143, Germany
Jens Reermann
Affiliation:
Institute of Electrical and Information Engineering, Kiel University, Kiel 24143, Germany
Erdem Yarar
Affiliation:
Institute for Materials Science, Kiel University, Kiel 24143, Germany
André Piorra
Affiliation:
Institute for Materials Science, Kiel University, Kiel 24143, Germany
Christine Kirchhof
Affiliation:
Institute for Materials Science, Kiel University, Kiel 24143, Germany
Enno Lage
Affiliation:
Institute for Materials Science, Kiel University, Kiel 24143, Germany
Michael Höft
Affiliation:
Institute of Electrical and Information Engineering, Kiel University, Kiel 24143, Germany
Gerhard U. Schmidt
Affiliation:
Institute of Electrical and Information Engineering, Kiel University, Kiel 24143, Germany
Reinhard Knöchel
Affiliation:
Institute of Electrical and Information Engineering, Kiel University, Kiel 24143, Germany
Jeffrey McCord
Affiliation:
Institute for Materials Science, Kiel University, Kiel 24143, Germany
Eckhard Quandt
Affiliation:
Institute for Materials Science, Kiel University, Kiel 24143, Germany
Dirk Meyners*
Affiliation:
Institute for Materials Science, Kiel University, Kiel 24143, Germany
*
a)Address all correspondence to this author. e-mail: dm@tf.uni-kiel.de
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Abstract

Composite magnetoelectrics implemented as thin film heterostructures are discussed in view of their applicability as highly sensitive magnetic field sensors. Here, either PZT or AlN served as piezoelectric component. The magnetostrictive phase consisted of layer systems based on FeCo or (Fe90Co10)78Si12B10. All functional layers were deposited with thicknesses of a few micrometers on Si cantilever structures with typical lateral dimensions of 25 mm by 2.2 mm. Magnetoelectric coefficients as large as 6900 V/cm Oe and a limit of detection as low as 1 pT/(Hz)1/2 were measured. Currently, the best result demonstrates a detection limit of 500 fT/(Hz)1/2 at 958 Hz frequency using a set of two sensors for external noise suppression. A frequency conversion technique is proposed to broaden the applicability of resonant magnetoelectric sensors to a wider frequency range. Finally, the achieved sensor performance is evaluated with regard to typical magnetic field amplitudes in medical applications.

Type
Invited Feature Paper
Copyright
Copyright © Materials Research Society 2017 

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Footnotes

Contributing Editor: Michael E. McHenry

This paper has been selected as an Invited Feature Paper.

References

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