Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-10T16:55:03.615Z Has data issue: false hasContentIssue false
  • English
  • Français

Raman-based analysis of implantation-induced expansion and stresses in sapphire crystals

Published online by Cambridge University Press:  03 March 2011

V.N. Gurarie ,
P.H. Otsuka ,
D.N. Jamieson  and
S. Prawer
V.N. Gurarie*
Affiliation:
School of Physics, MARC, University of Melbourne, Melbourne 3010, Australia
P.H. Otsuka
Affiliation:
School of Physics, MARC, University of Melbourne, Melbourne 3010, Australia
D.N. Jamieson
Affiliation:
School of Physics, MARC, University of Melbourne, Melbourne 3010, Australia
S. Prawer
Affiliation:
School of Physics, MARC, University of Melbourne, Melbourne 3010, Australia
*
a)Address all correspondence to this author. e-mail: v.gurarie@physics.unimelb.edu.au
Get access

Abstract

Raman spectroscopy was used to determine the lattice expansion and stress distribution within the ion implanted layer in sapphire crystals. The crystals with the (1120) facewere implanted with 3.0 MeV H+ ions to doses of 3.3 × 1017 cm−2 and 4.8 × 1017 cm−2.The strain components and their variation with depth were analyzed by measuring the shift of the Raman peak on the cross-sectional basal plane. A continuum mechanics approach considered a model of a semi-infinite anisotropic elastic space subjected to the implantation-induced lattice expansion. The expansion and resulting compressive stresses were found to increase with depth, reaching a sharp maximum at the end of the ion range. The implantation-induced expansion coefficient was shown to be independent of the ion energy loss and implantation depth in sapphire. Such behavior was discussed in light of stopping and range of ions in matter data and defect production by nuclear collisions and ionization processes.

Keywords

DefectsRadiation effectsRaman spectroscopy
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 5 , May 2005 , pp. 1131 - 1138
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Sakata, H., Dresselhous, G., Dresselhous, M.S. and Endo, M.: Effect of uniaxial stress on the Raman spectra of graphite fibers. J. Appl. Phys. 63, 2769 (1988).CrossRefGoogle Scholar
2.Belnap, J.D., Tsai, J-F. and Shetty, D.K.: Direct measurement of crack shielding in ceramics by the application of Raman microprobe spectroscopy. J. Mater. Res. 9, 3183 (1994).CrossRefGoogle Scholar
3.Orwa, J.O., Nugent, K.W., Jamieson, D.N. and Prawer, S.: Raman investigation of damage caused by deep ion implantation in diamond. Phys. Rev. B 62, 5461 (2000).CrossRefGoogle Scholar
4.Jamieson, D.N., Prawer, S., Nugent, K.W. and Dooley, S.P.: Cross-sectional Raman microscopy of MeV implanted diamond. Nucl. Inst. Meth. Phys. Res. B 106, 641 (1995).CrossRefGoogle Scholar
5.Sakaida, Y., Tanaka, K. and Shirakihara, K.: Local stress measurement in notched sapphire by Raman microspectroscopy. Mater. Sci. Res. Int. 6, 295 (2000).Google Scholar
6.Tekippe, V.J., Ramdas, A.K. and Rodriguez, S.: Piezospectroscopic study of the Raman spectrum of alpha–quartz. Phys. Rev. B. 8, 706 (1973).CrossRefGoogle Scholar
7.Shin, S.H., Pollak, F.H., and Raccah, P.M.: Effects of uniaxial stress on the Raman frequencies of Ti2O3, and Al2O3, in Proceedings of the 3rd International Conference on Light Scattering in Solids, edited by Balanski, M., Leite, R.C.C., and Porto, S.P.S. (Flammarion Sci., Paris, France, 1976), p. 401.Google Scholar
8.Jia, W. and Yen, W.M.: Raman scattering from sapphire fibers. J. Raman. Spect. 20, 785 (1989).CrossRefGoogle Scholar
9.Krefft, G.B. and EerNisse, E.P.: Volume expansion and annealing compaction of ion-bombarded single-crystal and polycrystalline α–Al2O3. J. Appl. Phys. 49, 2725 (1978).CrossRefGoogle Scholar
10.Wachtman, J.B. Jr., Teft, W.E., Lam, D.G. Jr., and Stinchfield, R.P.: Elastic constants of synthetic single crystal corundum at room temperature. J. Res. Natl. Bur. Stand. 64A, 213 (1960).CrossRefGoogle ScholarPubMed
11.Nye, J.F.: Physical Properties of Crystals (Oxford University Press, London, U.K., 1957).Google Scholar
12.Gurarie, V.N. and Otsuka, P.H.: Thermal shock resistance of aluminium oxide single crystals with different crystallographic faces. Mater. Chem. Phys. 75, 246 (2002).CrossRefGoogle Scholar
13.Melan, E. and Parkus, H.: Thermal stresses caused by stationary temperature fields (Springer-Verlag, Wein, 1953) (in German).Google Scholar
14.Novatsky, V.: Issues in thermoelasticity (Izd. Academy of Science USSR, Moscow, 1962) (in Russian).Google Scholar
15.White, C.W., McHargue, C.J., Sklad, P.S., Boatner, L.A. and Farlow, G.C.: Mechanical and tribological properties of ion implanted insulators, in Ion Implantation and Annealing of Crystalline Oxides (Mater. Sci. Rep. 4, Elsevier Science Publishers, North-Holland, Amsterdam, The Netherlands, 1989), p. 123.Google Scholar
16.Naguib, H.M., Singleton, J.F., Grant, W.A. and Carter, G.: Lattice disorder in alumina single crystals produced by ion bombardment. J. Mater. Sci. 8, 1633 (1973).CrossRefGoogle Scholar
17.Krefft, G.B., Beezhold, W. and EerNisse, E.P.: Effect of ionizing radiation on displacement damage in ion-bombarded single crystal α–Al2O3 and α–SiO2. IEEE Trans. Nucl. Sci. NS–22, 2247 (1975).CrossRefGoogle Scholar
18.Lever, R.F. and Brannon, K.W.: A low energy limit to boron channeling in silicon. J. Appl. Phys. 69, 6369 (1991).CrossRefGoogle Scholar
19.Dearnaley, G., Ward, G.A., Temple, W. and Wilkins, M.A.: Depth distribution of gallium ions implanted into silicon crystals. Appl. Phys. Lett. 27, 17 (1975).CrossRefGoogle Scholar
20.Blood, P., Dearnaley, G. and Wilkins, M.A.: The origin of non-Gaussian profiles in phosphorus-implanted silicon. J. Appl. Phys. 45, 5123 (1974).CrossRefGoogle Scholar