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Rectification and internal photoemission in metal/CVD diamond and metal/CVD diamond/silicon structures

Published online by Cambridge University Press:  31 January 2011

S. A. Grot ,
S. Lee ,
G.Sh. Gildenblat ,
C. W. Hatfield ,
C. R. Wronski ,
A. R. Badzian ,
T. Badzian  and
R. Messier
S. A. Grot
Affiliation:
Center for Electronic Materials and Processing, and The Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
S. Lee
Affiliation:
Center for Electronic Materials and Processing, and The Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
G.Sh. Gildenblat
Affiliation:
Center for Electronic Materials and Processing, and The Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
C. W. Hatfield
Affiliation:
Center for Electronic Materials and Processing, and The Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
C. R. Wronski
Affiliation:
Center for Electronic Materials and Processing, and The Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
A. R. Badzian
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
T. Badzian
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
R. Messier
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
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Abstract

Schottky diodes were formed with free-standing polycrystalline thin film diamond base as well as with polycrystalline diamond films grown on crystalline silicon. Current-voltage and internal photoemission measurements were used to characterize the Schottky diodes and the diamond film. Internal photoemission measurements yielded a barrier height of 1.15 eV. A comparison of experimental data for metal contacts to free-standing diamond films and those on silicon substrates indicates that both rectification and internal photoemission originate at the metal/diamond interface.

Type
Diamond and Diamond-Like Materials
Information
Journal of Materials Research , Volume 5 , Issue 11 , November 1990 , pp. 2497 - 2501
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1Yoder, M.N., Nav. Res. Rev. (2), 27 (1987).Google Scholar
2Geis, M.W., Efremow, N.N., and Rathman, D.D., J. Vac. Sci. Technol. A 6 (3), 1953 (1988).CrossRefGoogle Scholar
3Ravi, K.V. and Landstrass, M. L., in Proceedings of the First International Symposium on Diamond and Diamond-Like Films (Proceedings Volume 89–12), edited by Dismukes, J. P., Purdes, A. J., Meyerson, B. S., Moustakas, T. D., Spear, K. E., Ravi, K.V., and Yoder, M. (Los Angeles, CA, May 1989), pp. 24–37.Google Scholar
4Baliga, B. J., IEEE Electron Device Lett. EDL-10 (10), 455 (1989).CrossRefGoogle Scholar
5Prins, J. F., Appl. Phys. Lett. 41 (10), 950 (1982).CrossRefGoogle Scholar
6Geis, M.W., IEEE Electron Device Lett. EDL-8 (8), 341 (1987).Google Scholar
7Gildenblat, G.Sh., Grot, S.A., Wronski, C.R., Badzian, A.R., Badzian, T., and Messier, R., Appl. Phys. Lett. 53 (7), 586 (1988).Google Scholar
8Gildenblat, G.Sh., Grot, S.A., Wronski, C.R., Hicks, M.C., Badzian, A.R., Badzian, T., and Messier, R., in Technical Digest of the 1988 IEEE International Electron Devices Meeting (San Francisco, CA, December 11–14, 1988), pp. 626–629.Google Scholar
9Hicks, M. C., Wronski, C. R., Grot, S. A., Gildenblat, G. Sh., Badzian, A. R., Badzian, T., and Messier, R., J. Appl. Phys. 65 (5), 2139 (1989).Google Scholar
10Ellison, C. L., Cohen, R. M., and Hoggins, J.T., in Diamond, Boron Nitride, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by Glass, J.T., Messier, R. F., and Fujimori, N. (Mater. Res. Soc. Symp. Proc. 162, Pittsburgh, PA, 1990).Google Scholar
11Mort, J., Machonkin, M., Morgan, M., Jansen, F., Okumura, K., Le, Y. M.Grice, and Nemanich, R. J., in Proceedings of the First International Symposium on Diamond and Diamond-Like Films (Proceedings Volume 89–12), edited by Dismukes, J. P., Purdes, A. J., Meyerson, B. S., Moustakas, T. D., Spear, K. E., Ravi, K.V., and Yoder, M. (Los Angeles, CA, May 1989), pp. 420–423.Google Scholar
12Mori, Y., Kawarada, H., Yokota, Y., and Hiraki, A., in Diamond, Boron Nitride, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by Glass, J.T., Messier, R. F., and Fujimori, N. (Mater. Res. Soc. Symp. Proc. 162, Pittsburgh, PA, 1990).Google Scholar
13Geis, M.W., Smythe, D. L., Zayhowski, J. J., Rothschild, M., Ehrlich, D. J., Smith, D. K., and Ditmer, G. A., Extended Abstracts No. 15, Diamond and Diamond-Like Materials Synthesis, edited by Johnson, G. H., Badzian, A.R., and Geis, M.W. (Materials Research Society, Pittsburgh, PA, 1988), pp. 115–118.Google Scholar
14Shiomi, H., Nakahata, H., Imai, T., Nishibayashi, Y., and Fujimori, N., Jpn. J. Appl. Phys. 28 (5), 758 (1989).Google Scholar
15Gildenblat, G.Sh., Grot, S.A., Hatfield, C.W., Wronski, C.R., Badzian, A. R., Badzian, T., and Messier, R., in Diamond, Boron Nitride, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by Glass, J.T., Messier, R. F., and Fujimori, N. (Mater. Res. Soc. Symp. Proc. 162, Pittsburgh, PA, 1990).Google Scholar
16Fujimori, N., in Diamond, Boron Nitride, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by Glass, J.T., Messier, R. F., and Fujimori, N. (Mater. Res. Soc. Symp. Proc. 162, Pittsburgh, PA, 1990).Google Scholar
17Gildenblat, G.Sh., Grot, S.A., Hatfield, C.W., Wronski, CR., Badzian, A. R., Badzian, T., and Messier, R., Mater. Res. Bull. 25 (1), 129 (1990).Google Scholar
18Grot, S.A., Gildenblat, G.Sh., Hatfield, C.W., Wronski, C.R., Badzian, A.R., Badzian, T., and Messier, R., IEEE Electron Device Lett. EDL-11 (2), 100 (1990).Google Scholar
19Glover, G.H., Solid State Electron. 16 (9), 973 (1973).CrossRefGoogle Scholar
20Himpsel, F. J., Heimann, P., and Eastman, D. E., Solid State Commun. 36 (7), 631 (1980).Google Scholar
21Badzian, A. R., Badzian, T., and Pickrell, D., in Proceedings of the International Society for Optical Engineering Diamond Optics Meeting (SPIE Proceedings Series, Vol. 969), edited by Feldman, Albert and Holly, Sandor (San Diego, CA, August 16–17, 1988), pp. 14–21.Google Scholar
22Badzian, A. R., Badzian, T., Roy, R., Messier, R., and Spear, K. E., Mater. Res. Bull. 23 (4), 531 (1988).Google Scholar
23Cohen, S. S. and Sh, G.. Gildenblat, Metal-Semiconductor Contacts and Devices (Academic Press, Inc., New York, 1986), Chap. 3.Google Scholar