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Resistance switching behaviors of continuous-thick hBN films fabricated by radio-frequency-sputtering

Published online by Cambridge University Press:  12 November 2020

Qiang Li Open the ORCID record for Qiang Li [Opens in a new window] ,
Xiao Qin ,
Qifan Zhang ,
Yunhe Bai ,
Hua Tang ,
Chenyu Hu ,
Shuoheng Shen ,
Yufeng Li  and
Feng Yun
Qiang Li
Affiliation:
Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi'an Jiaotong University, Xi'an 710049, China School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an 710049, China
Xiao Qin
Affiliation:
Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an 710049, China
Qifan Zhang
Affiliation:
School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an 710049, China
Yunhe Bai
Affiliation:
School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an 710049, China
Hua Tang
Affiliation:
School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an 710049, China
Chenyu Hu
Affiliation:
School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
Shuoheng Shen
Affiliation:
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, SheffieldS1 3JD, UK
Yufeng Li
Affiliation:
Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi'an Jiaotong University, Xi'an 710049, China School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an 710049, China
Feng Yun*
Affiliation:
Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi'an Jiaotong University, Xi'an 710049, China School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an 710049, China
*
a)Address all correspondence to this author. e-mail: fyun2010@mail.xjtu.edu.cn
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Abstract

Continuous hBN films have been grown by means of a radio-frequency-sputtering technology, and their material properties have been investigated. The prepared hBN films can achieve good smoothness in a large area. The surface morphologies and compositions of the hBN films on Si substrate and Al film have been characterized, indicating that there is no difference. The 101-phase peak of hBN film is the strongest, and the optical band gap of the fabricated film is 5.84 eV. An attempt on the fabrication of the hBN based resistive switching (RS) device has been made by using an Ag/hBN/Al structure, leading to the observation of a clear and stable RS behavior. The device exhibits a resistance window (high-resistivity state/low-resistivity state) of around 102, and the RS behaviors of hBN film prepared by sputtering were first observed. It has been found that the opening voltage for the device is changed when a different cycle voltage is applied because of the built-in electric field increasing with the increase of applied cycle voltage. The mechanism of the RS behavior has been analyzed, which lay a foundation for the application of hBN as RS material in resistive random access memory to improve the storage density.

Keywords

resistive switchinghexagonal boron nitrideRF-sputtering technology
Type
Article
Information
Journal of Materials Research , Volume 35 , Issue 23-24 , 14 December 2020 , pp. 3247 - 3256
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Copyright
Copyright © The Author(s), 2020, published on behalf of Materials Research Society by Cambridge University Press

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