Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-14T18:34:50.925Z Has data issue: false hasContentIssue false

Scale-dependent nanomechanical behavior and anisotropic friction of nanotextured silicon surfaces

Published online by Cambridge University Press:  31 January 2011

Kyriakos Komvopoulos*
Affiliation:
Department of Mechanical Engineering, University of California, Berkeley, California 94720
*
a) Address all correspondence to this author. e-mail: kyriakos@me.berkeley.edu
Get access

Abstract

Nanoscale surface texturing of silicon was accomplished by oblique Ar+ ion beam irradiation. Atomic force microscope (AFM) imaging showed that nanotexturing produced an anisotropic morphology consisting of ordered nanometer-sized ripples. Surface force microscope (SFM) measurements showed that the nanotextured surface exhibited scale-dependent nanomechanical behavior during indentation loading/unloading and anisotropic sliding friction, significantly different from those of the original (untextured) surface. AFM and SFM results showed a strong dependence of the nanoindentation response and friction coefficient on the tip radius and sliding direction relative to the ripple orientation. The observed experimental trends are interpreted in terms of the applied normal load, real contact area, interfacial adhesion force, tip-ripple interaction scale, and ripple orientation.

Type
Articles
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Zhou, L., Kato, K., Vurens, G., and Talke, F.E.: The effect of slider surface texture on flyability and lubricant migration under near contact conditions. Tribol. Int. 36, 269 (2003).CrossRefGoogle Scholar
2.Ranjan, R., Lambeth, D.N., Tromel, M., Goglia, P., and Li, Y.: Laser texturing for low-flying-height media. J. Appl. Phys. 69, 5745 (1991).CrossRefGoogle Scholar
3.Raeymaekers, B., Etsion, I., and Talke, F.E.: Enhancing tribological performance of the magnetic tape/guide interface by laser surface texturing. Tribol. Lett. 27, 89 (2007).CrossRefGoogle Scholar
4.Kligerman, Y., Etsion, I., and Shinkarenko, A.: Improving tribological performance of piston rings by partial surface texturing. J. Tribol. 127, 632 (2005).CrossRefGoogle Scholar
5.Etsion, I.: Improving tribological performance of mechanical components by laser surface texturing. Tribol. Lett. 17, 733 (2004).CrossRefGoogle Scholar
6.Komvopoulos, K.: Adhesion and friction forces in microelectromechanical systems: Mechanisms, measurement, surface modification techniques, and adhesion theory. J. Adhes. Sci. Technol. 17, 477 (2003).CrossRefGoogle Scholar
7.Vajo, J.J., Doty, R.E., and Cirlin, E-H.: Influence of O2 + energy, flux, and fluence on the formation and growth of sputteringinduced ripple topography on silicon. J. Vac. Sci. Technol., A 14, 2709 (1996).CrossRefGoogle Scholar
8.Alkemade, P.F.A. and Jiang, Z.X.: Complex roughening of Si under oblique bombardment by low-energy oxygen ions. J. Vac. Sci. Technol., B 19, 1699 (2001).CrossRefGoogle Scholar
9.Zhou, H., Wang, Y., Zhou, L., Headrick, R.L., Özcan, A.S., Wang, Y., Özaydin, G., Ludwig, K.F. Jr., and Siddons, D.P.: Wavelength tunability of ion-bombardment-induced ripples on sapphire. Phys. Rev. B: Condens. Matter 75, 155416 (2007).CrossRefGoogle Scholar
10.Qian, H.X., Zhou, W., Fu, Y.Q., Ngoi, B.K.A., and Lim, G.C.: Crystallographically-dependent ripple formation on Sn surface irradiated with focused ion beam. Appl. Surf. Sci. 240, 140 (2005).CrossRefGoogle Scholar
11.Oyoshi, K., Hishita, S., Wada, K., Suehara, S., and Aizawa, T.: Roughness study of ion-irradiated silica glass surface. Appl. Surf. Sci. 100–101, 374 (1996).CrossRefGoogle Scholar
12.Liu, Z.X. and Cheung, N.W.: Anisotropic delamination energy of bonded rippled silicon surfaces created by Ar+ bombardment, in Integration of Heterogeneous Thin°Film Materials and Devices, edited by Atwater, H.A., Current, M.I., Levy, M., and Sands, T. (Mater. Res. Soc. Symp. Proc. 768, Warrendale, PA, 2003), G2.8.1.Google Scholar
13.Karmakar, P. and Ghose, D.: Nanoscale periodic and faceted structures formation on Si(100) by oblique angle oxygen ion sputtering. Nucl. Instrum. Methods Phys. Res., Sect. B 230, 539 (2005).CrossRefGoogle Scholar
14.Mishra, P., Karmakar, P., and Ghose, D.: Electrical characterization of oxygen-induced nanosized ripples on aluminum thin films by conductive atomic force microscopy. Nucl. Instrum. Methods Phys. Res., Sect. B 243, 16 (2006).CrossRefGoogle Scholar
15.Costantini, G., Rusponi, S., Buatier de Mongeot, F., Boragno, C., and Valbusa, U.: Periodic structures induced by normal-incidence sputtering on Ag(110) and Ag(001): Flux and temperature dependence. J. Phys. Condens. Matter 13, 5875 (2001).Google Scholar
16.Bradley, R.M. and Harper, J.M.E.: Theory of ripple topography induced by ion bombardment. J. Vac. Sci. Technol., A 6, 2390 (1988).CrossRefGoogle Scholar
17.Lu, W. and Komvopoulos, K.: Nanotribological and nanomechanical properties of ultrathin amorphous carbon films synthesized by radio frequency sputtering. J. Tribol. 123, 641 (2001).CrossRefGoogle Scholar
18.Pharr, G.M., Oliver, W.C., and Clarke, D.R.: Hysteresis and discontinuity in the indentation load-displacement behavior of silicon. Scr. Metall. 23, 1949 (1989).CrossRefGoogle Scholar
19.Pharr, G.M., Oliver, W.C., and Harding, D.S.: New evidence for a pressure-induced phase transformation during the indentation of silicon. J. Mater. Res. 6, 1129 (1991).CrossRefGoogle Scholar
20.Gupta, M.C. and Ruoff, A.L.: Static compression of silicon in the [100] and in the [111] directions. J. Appl. Phys. 51, 1072 (1980).CrossRefGoogle Scholar
21.Timpe, S.J. and Komvopoulos, K.: The effect of adhesion on the static friction properties of sidewall contact interfaces of microelectromechanical devices. J. Microelectromech. Syst. 15, 1612 (2006).CrossRefGoogle Scholar