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Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex Band Structure

Published online by Cambridge University Press:  31 January 2011

Xiangdong Chen ,
Xiang-Dong Wang ,
Kou-Chen Liu ,
Dong-Won Kim  and
Sanjay Banerjee
Xiangdong Chen
Affiliation:
Microelectronics Research Center, University of Texas, Austin, Texas 78712
Xiang-Dong Wang
Affiliation:
Microelectronics Research Center, University of Texas, Austin, Texas 78712
Kou-Chen Liu
Affiliation:
Microelectronics Research Center, University of Texas, Austin, Texas 78712
Dong-Won Kim
Affiliation:
Microelectronics Research Center, University of Texas, Austin, Texas 78712
Sanjay Banerjee
Affiliation:
Microelectronics Research Center, University of Texas, Austin, Texas 78712
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Abstract

The band offsets and band gap are the most important parameters that determine the electrical and optical behavior of a heterojunction. In situ scanning tunneling spectroscopy was employed to measure the valence-band offset of strained Si1−xGex-on-Si (100) for the first time. The valence-band offsets of the strained Si0.77Ge0.23 and Si0.59Ge0.41 on Si(100) were found to be 0.21 and 0.36 eV, respectively. The results were in good agreement with theory and with results from other experimental methods. Due to band bending and surface states, it was difficult to determine the conduction band edge at the interface of the Si1−xGex/Si exactly but we found that the conduction band offset is much smaller than the valence-band offset.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 6 , June 2000 , pp. 1257 - 1260
Copyright
Copyright © Materials Research Society 2000

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References

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