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The selective area deposition of diamond films

Published online by Cambridge University Press:  31 January 2011

P. G. Roberts ,
D. K. Milne ,
P. John ,
M. G. Jubber  and
J. I. B. Wilson
P. G. Roberts
Affiliation:
Department of Chemistry, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom
D. K. Milne
Affiliation:
Department of Chemistry, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom
P. John
Affiliation:
Department of Chemistry, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom
M. G. Jubber
Affiliation:
Department of Physics, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom
J. I. B. Wilson
Affiliation:
Department of Physics, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom
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Abstract

Diamond films were selectively nucleated and grown on single crystal (100) silicon by microwave plasma assisted chemical vapor deposition with submicron spatial resolution. A thermal silicon dioxide layer on the wafers was patterned by standard photolithography. Nucleation was performed by applying a dc bias of −250 to −350 V in a hydrogen-methane plasma. Lifting off the oxide layer by HF etching prior to growth delineated the nucleation pattern which was replicated by the diamond film after growth. The growth of polycrystalline diamond was performed in a hydrogen-carbon monoxide-methane mixture selected to facilitate (100) texturing. Individual faceted crystallites were grown on a square matrix of sites, with a pitch of 3 μm, by controlling the nucleation densities within the windows exposing the prenucleated silicon. However, the orientation of the crystallites was randomly aligned with respect to the (100) silicon lattice within the micron scale windows employed in this study.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 12 , December 1996 , pp. 3128 - 3132
Copyright
Copyright © Materials Research Society 1996

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